Calibration 90 nm node RF mosfets, including stress degradation

H. L. Kao; C. H. Kao; A. Chin; C. C. Liao

doi:10.1002/mop.22209

Calibration 90 nm node RF mosfets, including stress degradation

H. L. Kao^*, C. H. Kao, A. Chin, C. C. Liao

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 期刊稿件 › 文章 › 同行評審

摘要

Using a microstrip line layout, a low minimum noise figure (NF _min) of 0.51 dB, at 10 GHz, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NF_min was located at the peak f_T of 152 GHz, coinciding with the peak transconductance (g _m). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NF_min results was developed, including the changes after hot-carrier stress.

原文	英語
頁（從 - 到）	604-607
頁數	4
期刊	Microwave and Optical Technology Letters
卷	49
發行號	3
DOIs	https://doi.org/10.1002/mop.22209
出版狀態	已出版 - 03 2007

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abstract = "Using a microstrip line layout, a low minimum noise figure (NF min) of 0.51 dB, at 10 GHz, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NFmin was located at the peak fT of 152 GHz, coinciding with the peak transconductance (g m). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NFmin results was developed, including the changes after hot-carrier stress.",

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author = "Kao, {H. L.} and Kao, {C. H.} and A. Chin and Liao, {C. C.}",

year = "2007",

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T1 - Calibration 90 nm node RF mosfets, including stress degradation

AU - Kao, H. L.

AU - Kao, C. H.

AU - Chin, A.

AU - Liao, C. C.

PY - 2007/3

Y1 - 2007/3

N2 - Using a microstrip line layout, a low minimum noise figure (NF min) of 0.51 dB, at 10 GHz, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NFmin was located at the peak fT of 152 GHz, coinciding with the peak transconductance (g m). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NFmin results was developed, including the changes after hot-carrier stress.

AB - Using a microstrip line layout, a low minimum noise figure (NF min) of 0.51 dB, at 10 GHz, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NFmin was located at the peak fT of 152 GHz, coinciding with the peak transconductance (g m). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NFmin results was developed, including the changes after hot-carrier stress.

KW - MOSFETs

KW - Model

KW - NF

KW - Stress

KW - f

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M3 - 文章

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SN - 0895-2477

VL - 49

SP - 604

EP - 607

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 3

ER -

Calibration 90 nm node RF mosfets, including stress degradation

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