Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy

Shou Yi Kuo*, C. C. Kei, Chien Nan Hsiao, C. K. Chao, Fang I. Lai, Hao Chung Kuo, Wen Feng Hsieh, Shing Chung Wang

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

3 引文 斯高帕斯(Scopus)

摘要

High-density GaN nanorods with outstanding crystal quality were grown on c-sapphire substrates by radio-frequency plasma-assisted metalorganic molecular beam epitaxy under catalyst- and template-free growth condition. Morphological and structural characterization of the GaN nanorods was employed by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy (HRTEM). These results indicate that the rod number density can reach 1 × 1010 cm -2 and the nanorods are well-aligned with preferentially oriented in the c-axis direction. Meanwhile, no metallic (Ga) droplet was observed at the end of the rods, which is the intrinsic feature of vapor-liquid-solid method. Nanorods with no traces of any extended defects, as confirmed by TEM, were obtained as well. In addition, optical investigation was carried out by temperature- and power-dependent micro-photoluminescence (μ-PL). The PL peak energies are red-shifted with increasing excitation power, which is attributed to many-body effects of free carriers under high excitation intensity. The growth mechanism is discussed on the basis of the experimental results. Catalyst-free GaN nanorods presented here might have a high potential for applications in nanoscale photonic devices.

原文英語
頁(從 - 到)273-276
頁數4
期刊IEEE Transactions on Nanotechnology
5
發行號3
DOIs
出版狀態已出版 - 05 2006
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