Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

Jer Chyi Wang; Chao Sung Lai; Yu Kai Chen; Chih Ting Lin; Chuan Pu Liu; Michael R.S. Huang; Yu Ching Fang

doi:10.1149/1.3109573

Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

Jer Chyi Wang^*
, Chao Sung Lai
, Yu Kai Chen
, Chih Ting Lin
, Chuan Pu Liu
, Michael R.S. Huang
, Yu Ching Fang

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University
National Cheng Kung University
Chung-shan Institute of Science and Technology Taiwan

研究成果: 期刊稿件 › 文章 › 同行評審

41 引文斯高帕斯（Scopus）

摘要

Gadolinium oxide nanocrystal (Gd₂ O₃-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd₂ O₃-NC dot surrounded by amorphous Gd₂ O₃ dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd₂ O₃-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 10¹¹ cm^-2. In addition, the formation of Gd₂ O₃ -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 10⁴ program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd₂ O₃ nanocrystal memory.

原文	英語
頁（從 - 到）	H202-H204
期刊	Electrochemical and Solid-State Letters
卷	12
發行號	6
DOIs	https://doi.org/10.1149/1.3109573
出版狀態	已出版 - 2009

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title = "Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing",

abstract = "Gadolinium oxide nanocrystal (Gd2 O3-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2 O3-NC dot surrounded by amorphous Gd2 O3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2 O3-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5{\texttimes} 1011 cm-2. In addition, the formation of Gd2 O3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd2 O3 nanocrystal memory.",

author = "Wang, \{Jer Chyi\} and Lai, \{Chao Sung\} and Chen, \{Yu Kai\} and Lin, \{Chih Ting\} and Liu, \{Chuan Pu\} and Huang, \{Michael R.S.\} and Fang, \{Yu Ching\}",

year = "2009",

doi = "10.1149/1.3109573",

language = "英语",

volume = "12",

pages = "H202--H204",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "6",

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TY - JOUR

T1 - Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

AU - Wang, Jer Chyi

AU - Lai, Chao Sung

AU - Chen, Yu Kai

AU - Lin, Chih Ting

AU - Liu, Chuan Pu

AU - Huang, Michael R.S.

AU - Fang, Yu Ching

PY - 2009

Y1 - 2009

N2 - Gadolinium oxide nanocrystal (Gd2 O3-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2 O3-NC dot surrounded by amorphous Gd2 O3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2 O3-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 1011 cm-2. In addition, the formation of Gd2 O3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd2 O3 nanocrystal memory.

AB - Gadolinium oxide nanocrystal (Gd2 O3-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2 O3-NC dot surrounded by amorphous Gd2 O3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2 O3-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 1011 cm-2. In addition, the formation of Gd2 O3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd2 O3 nanocrystal memory.

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U2 - 10.1149/1.3109573

DO - 10.1149/1.3109573

M3 - 文章

AN - SCOPUS:64549108544

SN - 1099-0062

VL - 12

SP - H202-H204

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

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