Characterization of BaPbO3 and Ba(Pb1-xBix)O3 thin films

Chia Liang Sun; Hong Wen Wang; Ming Chu Chang; Meng Suan Lin; San Yuan Chen

doi:10.1016/S0254-0584(02)00377-2

Characterization of BaPbO₃ and Ba(Pb_1-xBi_x)O₃ thin films

Chia Liang Sun
, Hong Wen Wang^*
, Ming Chu Chang
, Meng Suan Lin
, San Yuan Chen

^*此作品的通信作者

National Yang Ming Chiao Tung University
Chung Yuan Christian University
National Tsing Hua University

研究成果: 期刊稿件 › 文章 › 同行評審

13 引文斯高帕斯（Scopus）

摘要

BaPbO₃ and Ba(Pb_1-xBi_x)O₃ films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO₂/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO₃ phase starts to form above 600 °C and the Pb-excess addition would enhance the formation of single perovskite BaPbO₃ phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Ω sq^-1 (resistivity ≈ 1.07 × 10^-4 Ω cm) could be obtained at 750 °C. However, an annealing temperature over 800 °C causes reactions between substrate and BaPbO₃ phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb_1-xBi_x)O₃ films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Ω sq^-1 at x = 0.3.

原文	英語
頁（從 - 到）	507-511
頁數	5
期刊	Materials Chemistry and Physics
卷	78
發行號	2
DOIs	https://doi.org/10.1016/S0254-0584(02)00377-2
出版狀態	已出版 - 17 02 2003
對外發佈	是

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@article{0e04f4b1d12c48d29c4335c1f2a90f82,

title = "Characterization of BaPbO3 and Ba(Pb1-xBix)O3 thin films",

abstract = "BaPbO3 and Ba(Pb1-xBix)O3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO3 phase starts to form above 600 °C and the Pb-excess addition would enhance the formation of single perovskite BaPbO3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Ω sq-1 (resistivity ≈ 1.07 × 10-4 Ω cm) could be obtained at 750 °C. However, an annealing temperature over 800 °C causes reactions between substrate and BaPbO3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb1-xBix)O3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Ω sq-1 at x = 0.3.",

keywords = "Barium metaplumbate, Metal-organic deposition, Resistivity, Thin films",

author = "Sun, \{Chia Liang\} and Wang, \{Hong Wen\} and Chang, \{Ming Chu\} and Lin, \{Meng Suan\} and Chen, \{San Yuan\}",

year = "2003",

month = feb,

day = "17",

doi = "10.1016/S0254-0584(02)00377-2",

language = "英语",

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TY - JOUR

T1 - Characterization of BaPbO3 and Ba(Pb1-xBix)O3 thin films

AU - Sun, Chia Liang

AU - Wang, Hong Wen

AU - Chang, Ming Chu

AU - Lin, Meng Suan

AU - Chen, San Yuan

PY - 2003/2/17

Y1 - 2003/2/17

N2 - BaPbO3 and Ba(Pb1-xBix)O3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO3 phase starts to form above 600 °C and the Pb-excess addition would enhance the formation of single perovskite BaPbO3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Ω sq-1 (resistivity ≈ 1.07 × 10-4 Ω cm) could be obtained at 750 °C. However, an annealing temperature over 800 °C causes reactions between substrate and BaPbO3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb1-xBix)O3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Ω sq-1 at x = 0.3.

AB - BaPbO3 and Ba(Pb1-xBix)O3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO3 phase starts to form above 600 °C and the Pb-excess addition would enhance the formation of single perovskite BaPbO3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Ω sq-1 (resistivity ≈ 1.07 × 10-4 Ω cm) could be obtained at 750 °C. However, an annealing temperature over 800 °C causes reactions between substrate and BaPbO3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb1-xBix)O3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Ω sq-1 at x = 0.3.

KW - Barium metaplumbate

KW - Metal-organic deposition

KW - Resistivity

KW - Thin films

UR - https://www.scopus.com/pages/publications/0037449961

U2 - 10.1016/S0254-0584(02)00377-2

DO - 10.1016/S0254-0584(02)00377-2

M3 - 文章

AN - SCOPUS:0037449961

SN - 0254-0584

VL - 78

SP - 507

EP - 511

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2

ER -

Characterization of BaPbO3 and Ba(Pb1-xBix)O3 thin films

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Characterization of BaPbO₃ and Ba(Pb_1-xBi_x)O₃ thin films