TY - JOUR
T1 - Characterization of Pr2O3 added metals/GaAs Schottky diodes using X-ray photoelectron spectroscopy
AU - Wang, Hung Thung
AU - Chang, Liann Be
AU - Cheng, Yi Chang
AU - Lin, Yin Kwang
AU - Hsu, Chung I.G.
PY - 1999
Y1 - 1999
N2 - In this research, the surface chemical structures of Pr2O3 doped Liquid Phase Epitaxy (LPE) layers were investigated by X-ray Photoelectron Spectroscopy (XPS). The bonding energies of these grown surfaces are studied under various adding conditions. The comparisons of these surface chemical structures were used to explain the evolutions of the grown surfaces with their effects on the Schottky barrier height. Because the surface states are lowered and the Fermi level is not pinned, these metals (Au, Ag, Ni, Pt)/GaAs Schottky structures all show an improved diode performance by adding Pr2O3. The resulting barrier height and ideality factor, as estimated by the current-voltage measurement, can be as high as 0.94±0.02 eV and as unitary as 1.03±0.01, respectively.
AB - In this research, the surface chemical structures of Pr2O3 doped Liquid Phase Epitaxy (LPE) layers were investigated by X-ray Photoelectron Spectroscopy (XPS). The bonding energies of these grown surfaces are studied under various adding conditions. The comparisons of these surface chemical structures were used to explain the evolutions of the grown surfaces with their effects on the Schottky barrier height. Because the surface states are lowered and the Fermi level is not pinned, these metals (Au, Ag, Ni, Pt)/GaAs Schottky structures all show an improved diode performance by adding Pr2O3. The resulting barrier height and ideality factor, as estimated by the current-voltage measurement, can be as high as 0.94±0.02 eV and as unitary as 1.03±0.01, respectively.
UR - http://www.scopus.com/inward/record.url?scp=0032594455&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-4079(199909)34:8<1017::AID-CRAT1017>3.0.CO;2-N
DO - 10.1002/(SICI)1521-4079(199909)34:8<1017::AID-CRAT1017>3.0.CO;2-N
M3 - 文章
AN - SCOPUS:0032594455
SN - 0232-1300
VL - 34
SP - 1017
EP - 1021
JO - Crystal Research and Technology
JF - Crystal Research and Technology
IS - 8
ER -