Charge-trapping properties of poly-silicon oxides by rapid thermal N2O process

Chyuan Haur Kao*, C. S. Chen, C. H. Lee

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

摘要

The polyoxide with nitrogen incorporation by RTN2O process can obtain smoother interface of the polyoxide/polysilicon, thus improving the characteristics of polyoxides. However, too much nitrogen does not improve, instead, degrades, the quality of the polyoxide and to induce thickness non-uniformity. It can be found that initial hole-trapping phenomenon was observed in the polyoxides grown by rapid thermal N2O oxidation process and the higher the growth temperature is, the larger the hole-trapping rate is. The larger hole-trapping is due to more excessive nitrogen release in short time at the polyoxide/polysilicon interface at high temperature oxidation, which may induce large undulations at the Si/SiO2 interface and result in localized high electric fields to obtain smaller Qbds. However, the charge-trapping properties can be improved by the N2O-annealed process at proper temperature due to proper amount of nitrogen incorporated into the polyoxide and piled up at the interface.

原文英語
頁(從 - 到)1075-1079
頁數5
期刊Microelectronics Journal
39
發行號8
DOIs
出版狀態已出版 - 08 2008

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