Comparison of GaN P-I-N and Schottky rectifier performance

Anping P. Zhang; Gerard T. Dang; Fan Ren; Hyun Cho; Kyu Pil Lee; Stephen J. Pearton; Jenn Inn Chyi; T. E. Nee; C. M. Lee; C. C. Chuo

doi:10.1109/16.906427

Comparison of GaN P-I-N and Schottky rectifier performance

Anping P. Zhang
, Gerard T. Dang
, Fan Ren
, Hyun Cho
, Kyu Pil Lee
, Stephen J. Pearton
, Jenn Inn Chyi
, T. E. Nee
, C. M. Lee
, C. C. Chuo

University of Florida
National Central University

研究成果: 期刊稿件 › 文章 › 同行評審

79 引文斯高帕斯（Scopus）

摘要

The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K^-1.

原文	英語
頁（從 - 到）	407-411
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	48
發行號	3
DOIs	https://doi.org/10.1109/16.906427
出版狀態	已出版 - 03 2001
對外發佈	是

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abstract = "The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K-1.",

keywords = "GaN, Power electronics, Rectifiers",

author = "Zhang, \{Anping P.\} and Dang, \{Gerard T.\} and Fan Ren and Hyun Cho and Lee, \{Kyu Pil\} and Pearton, \{Stephen J.\} and Chyi, \{Jenn Inn\} and Nee, \{T. E.\} and Lee, \{C. M.\} and Chuo, \{C. C.\}",

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AU - Zhang, Anping P.

AU - Dang, Gerard T.

AU - Ren, Fan

AU - Cho, Hyun

AU - Lee, Kyu Pil

AU - Pearton, Stephen J.

AU - Chyi, Jenn Inn

AU - Nee, T. E.

AU - Lee, C. M.

AU - Chuo, C. C.

PY - 2001/3

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N2 - The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K-1.

AB - The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K-1.

KW - GaN

KW - Power electronics

KW - Rectifiers

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EP - 411

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

Comparison of GaN P-I-N and Schottky rectifier performance

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