Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics

Tung Ming Pan; Tan Fu Lei; Tien Sheng Chao

doi:10.1063/1.1347405

Comparison of ultrathin CoTiO₃ and NiTiO₃ high-k gate dielectrics

Tung Ming Pan^*, Tan Fu Lei, Tien Sheng Chao

^*此作品的通信作者

研究成果: 期刊稿件 › 文章 › 同行評審

31 引文斯高帕斯（Scopus）

摘要

High-k cobalt-titanium oxide (CoTiO₃) and nickel-titanium oxide (NiTiO₃) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO₃/Si₃N₄/Si and Al/NiTiO₃/Si₃N₄/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO₃ is larger than that of NiTiO₃. In addition, CoTiO₃ depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

原文	英語
頁（從 - 到）	3447-3452
頁數	6
期刊	Journal of Applied Physics
卷	89
發行號	6
DOIs	https://doi.org/10.1063/1.1347405
出版狀態	已出版 - 15 03 2001
對外發佈	是

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abstract = "High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.",

author = "Pan, {Tung Ming} and Lei, {Tan Fu} and Chao, {Tien Sheng}",

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AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Chao, Tien Sheng

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Y1 - 2001/3/15

N2 - High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

AB - High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

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M3 - 文章

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EP - 3452

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics

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Comparison of ultrathin CoTiO₃ and NiTiO₃ high-k gate dielectrics