Defects and doping effects in CdTe and CuinS2 by phosphorus ion implantation and pulsed electron beam annealing

H. Y. Ueng; H. L. Hwang

doi:10.4028/www.scientific.net/SSP.1-2.343

Defects and doping effects in CdTe and CuinS₂ by phosphorus ion implantation and pulsed electron beam annealing

H. Y. Ueng
, H. L. Hwang

National Tsing Hua University

研究成果: 圖書/報告稿件的類型 › 章節 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

This paper reviews the recent developments of p–type doping in CdTe and CuInS₂. In both cases, hole concentrations exceeding to 10¹⁹ cm^–3 have been obtained with phosphorus ion implantation and pulsed electron beam annealing. The implant- and damage-profiles, and the atom redistributions after the annealing were calculated to explain the experimental results. Defect models were proposed to further illustrate the doping mechanisms.

原文	英語
主出版物標題	Solid State Phenomena
發行者	Trans Tech Publications Ltd
頁面	343-359
頁數	17
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.1-2.343
出版狀態	已出版 - 1988
對外發佈	是

出版系列

名字	Solid State Phenomena
卷	1-2
ISSN（列印）	1012-0394
ISSN（電子）	1662-9779

文獻附註

Publisher Copyright:
© 1988 Trans Tech Publications, Switzerland.

存取文件

10.4028/www.scientific.net/SSP.1-2.343

其它文件與鏈接

Link to publication in Scopus

引用此

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