Determination of Biaxial Bending Strength of Thin Silicon Dies by the PoEF Test

M. Y. Tsai; J. H. Yeh; P. S. Huang; Y. W. Wang; D. L. Chen; M. K. Shih; David Tarng

doi:10.1109/IMPACT50485.2020.9268550

Determination of Biaxial Bending Strength of Thin Silicon Dies by the PoEF Test

M. Y. Tsai^*
, J. H. Yeh
, P. S. Huang
, Y. W. Wang
, D. L. Chen
, M. K. Shih
, David Tarng

^*此作品的通信作者

機械工程學系(含學碩博士班)

Chang Gung University
Advanced Semiconductor Engineering, Inc.

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

The easy-to-use point-load on elastic foundation (PoEF) test with biaxial bending stress state, similar to a conventional ball-on-ring test, is studied for determining the thin silicon die strength, which may feature geometric and contact nonlinearities. The feasibility of this test method with a linear theory is evaluated by a nonlinear finite element method (NFEM) with taking into account geometric and contact nonlinearities. The results show that the geometric nonlinearity would cause significant errors of strength calculation of using the linear theory for thin dies in this test. The NFEM results, more accurate than theoretical formulation, are proposed for calculating the strength of thin dies. As a result, the geometric nonlinearity has to be taken into account for this PoEF test, when the thin silicon dies are tested for bending strength data.

原文	英語
主出版物標題	International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2020 and 22nd International Conference on Electronics Materials and Packaging, EMAP 2020 - Proceedings
發行者	IEEE Computer Society
頁面	290-293
頁數	4
ISBN（電子）	9781728198514
DOIs	https://doi.org/10.1109/IMPACT50485.2020.9268550
出版狀態	已出版 - 21 10 2020
事件	15th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2020 and 22nd International Conference on Electronics Materials and Packaging, EMAP 2020 - Taipei, 台灣持續時間: 21 10 2020 → 23 10 2020

出版系列

名字	Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
卷	2020-October
ISSN（列印）	2150-5934
ISSN（電子）	2150-5942

Conference

Conference	15th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2020 and 22nd International Conference on Electronics Materials and Packaging, EMAP 2020
國家/地區	台灣
城市	Taipei
期間	21/10/20 → 23/10/20

文獻附註

Publisher Copyright:
© 2020 IEEE.

存取文件

10.1109/IMPACT50485.2020.9268550

其它文件與鏈接

Link to publication in Scopus

引用此

Tsai, M. Y., Yeh, J. H., Huang, P. S., Wang, Y. W., Chen, D. L., Shih, M. K., & Tarng, D. (2020). Determination of Biaxial Bending Strength of Thin Silicon Dies by the PoEF Test. 於 International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2020 and 22nd International Conference on Electronics Materials and Packaging, EMAP 2020 - Proceedings (頁 290-293). 文章 9268550 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT; 卷 2020-October). IEEE Computer Society. https://doi.org/10.1109/IMPACT50485.2020.9268550

Tsai, M. Y. ; Yeh, J. H. ; Huang, P. S. 等. / Determination of Biaxial Bending Strength of Thin Silicon Dies by the PoEF Test. International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2020 and 22nd International Conference on Electronics Materials and Packaging, EMAP 2020 - Proceedings. IEEE Computer Society, 2020. 頁 290-293 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT).

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title = "Determination of Biaxial Bending Strength of Thin Silicon Dies by the PoEF Test",

abstract = "The easy-to-use point-load on elastic foundation (PoEF) test with biaxial bending stress state, similar to a conventional ball-on-ring test, is studied for determining the thin silicon die strength, which may feature geometric and contact nonlinearities. The feasibility of this test method with a linear theory is evaluated by a nonlinear finite element method (NFEM) with taking into account geometric and contact nonlinearities. The results show that the geometric nonlinearity would cause significant errors of strength calculation of using the linear theory for thin dies in this test. The NFEM results, more accurate than theoretical formulation, are proposed for calculating the strength of thin dies. As a result, the geometric nonlinearity has to be taken into account for this PoEF test, when the thin silicon dies are tested for bending strength data.",

keywords = "Bending Strength, Geometric Nonlinearity, PoEF Test, Thin Silicon Die",

author = "Tsai, \{M. Y.\} and Yeh, \{J. H.\} and Huang, \{P. S.\} and Wang, \{Y. W.\} and Chen, \{D. L.\} and Shih, \{M. K.\} and David Tarng",

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year = "2020",

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doi = "10.1109/IMPACT50485.2020.9268550",

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series = "Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT",

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Tsai, MY, Yeh, JH, Huang, PS, Wang, YW, Chen, DL, Shih, MK & Tarng, D 2020, Determination of Biaxial Bending Strength of Thin Silicon Dies by the PoEF Test. 於 International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2020 and 22nd International Conference on Electronics Materials and Packaging, EMAP 2020 - Proceedings., 9268550, Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT, 卷 2020-October, IEEE Computer Society, 頁 290-293, 15th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2020 and 22nd International Conference on Electronics Materials and Packaging, EMAP 2020, Taipei, 台灣, 21/10/20. https://doi.org/10.1109/IMPACT50485.2020.9268550

Determination of Biaxial Bending Strength of Thin Silicon Dies by the PoEF Test. / Tsai, M. Y.; Yeh, J. H.; Huang, P. S. 等.
International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2020 and 22nd International Conference on Electronics Materials and Packaging, EMAP 2020 - Proceedings. IEEE Computer Society, 2020. p. 290-293 9268550 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT; 卷 2020-October).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Determination of Biaxial Bending Strength of Thin Silicon Dies by the PoEF Test

AU - Tsai, M. Y.

AU - Yeh, J. H.

AU - Huang, P. S.

AU - Wang, Y. W.

AU - Chen, D. L.

AU - Shih, M. K.

AU - Tarng, David

PY - 2020/10/21

Y1 - 2020/10/21

N2 - The easy-to-use point-load on elastic foundation (PoEF) test with biaxial bending stress state, similar to a conventional ball-on-ring test, is studied for determining the thin silicon die strength, which may feature geometric and contact nonlinearities. The feasibility of this test method with a linear theory is evaluated by a nonlinear finite element method (NFEM) with taking into account geometric and contact nonlinearities. The results show that the geometric nonlinearity would cause significant errors of strength calculation of using the linear theory for thin dies in this test. The NFEM results, more accurate than theoretical formulation, are proposed for calculating the strength of thin dies. As a result, the geometric nonlinearity has to be taken into account for this PoEF test, when the thin silicon dies are tested for bending strength data.

AB - The easy-to-use point-load on elastic foundation (PoEF) test with biaxial bending stress state, similar to a conventional ball-on-ring test, is studied for determining the thin silicon die strength, which may feature geometric and contact nonlinearities. The feasibility of this test method with a linear theory is evaluated by a nonlinear finite element method (NFEM) with taking into account geometric and contact nonlinearities. The results show that the geometric nonlinearity would cause significant errors of strength calculation of using the linear theory for thin dies in this test. The NFEM results, more accurate than theoretical formulation, are proposed for calculating the strength of thin dies. As a result, the geometric nonlinearity has to be taken into account for this PoEF test, when the thin silicon dies are tested for bending strength data.

KW - Bending Strength

KW - Geometric Nonlinearity

KW - PoEF Test

KW - Thin Silicon Die

UR - https://www.scopus.com/pages/publications/85098110362

U2 - 10.1109/IMPACT50485.2020.9268550

DO - 10.1109/IMPACT50485.2020.9268550

M3 - 会议稿件

AN - SCOPUS:85098110362

T3 - Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT

SP - 290

EP - 293

BT - International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2020 and 22nd International Conference on Electronics Materials and Packaging, EMAP 2020 - Proceedings

PB - IEEE Computer Society

T2 - 15th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2020 and 22nd International Conference on Electronics Materials and Packaging, EMAP 2020

Y2 - 21 October 2020 through 23 October 2020

ER -

Tsai MY, Yeh JH, Huang PS, Wang YW, Chen DL, Shih MK 等. Determination of Biaxial Bending Strength of Thin Silicon Dies by the PoEF Test. 於 International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2020 and 22nd International Conference on Electronics Materials and Packaging, EMAP 2020 - Proceedings. IEEE Computer Society. 2020. p. 290-293. 9268550. (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT). doi: 10.1109/IMPACT50485.2020.9268550

Determination of Biaxial Bending Strength of Thin Silicon Dies by the PoEF Test

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