Device level electrical-thermal-stress coupled-field modeling

Guang Yu Huang, Cher Ming Tan*

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

1 引文 斯高帕斯(Scopus)

摘要

The requirement of electrical-thermal-stress (ETS) modelling of semiconductor devices demands the use of finite element analysis (FEA) for device simulation. In this work, we employ a new finite element analysis software, FEMLAB for the ETS simulation of power diode, a basic building blocking for power electronic devices, and the static electrical and recovery transient characteristics of power diode are considered. The E-T model of the power diode is compared with the results from Medici, and the T-S model of the power diode is compared with the results from ANSYS. Good agreements are observed from both comparisons. The S-E model of power diode is computed using the deformation potential theory, and we demonstrate that the electron and hole mobilities of (0 1 0) biaxial compressive stressed power diode are modified by the stress due to energy splitting. The strain-induced changes of bandgap and effective mobilities cause a reduction in the diode drive current by about 5% at the maximum along [0 0 1] direction.

原文英語
頁(從 - 到)1823-1827
頁數5
期刊Microelectronics Reliability
46
發行號9-11
DOIs
出版狀態已出版 - 09 2006
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