Device size-dependent improved resistive switching memory performance

The device size-dependent resistive memory switching and improvement in the switching performance in a CMOS compatible W/TiN contact device is reported as compared to W/W, Al/TiN, and Ir/TiN contacts, due to oxygen-rich layer formation at the W/filament interface. A small device area of 0.15 × 0.15 μm ² and interface between the electrodes has been observed from the transmission electron microscopy images. The fabricated small size devices have shown improved switching endurance with a small current compliance of 50 μA without separate forming process. The reactivity of electrode materials and its interface play an important role in obtaining the stable resistive switching behavior in W/TiN contact-formed W/TiO_x/TiN structure. This device has shown long consecutive switching cycles (>10³), read endurance of >10⁵ times, good uniformity, and data retention of >10 ⁴ s at 85 °C under low-current compliance of 50 μA.