@inproceedings{0affbc0605814432a8233a02055dc4d1,
title = "Dimensional dependences of the dynamic-NBTI with 1.2 nm N2O-ISSG oxynitrides",
abstract = "In this paper, we compare RTO, N2O-ISSG and RPNO ultrathin oxynitride gate dielectrics with equal physical oxide thickness of 12 {\AA} under Negative bias temperature instability (NBTI) degradation and/or Dynamic NBTI (DNBTI) reliability for Ultra-thin SiON Gate Dielectrics in pMOSFET devices. It was found that the N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties and excellent reliability. This is a very crucial issue for the present and future CMOS ULSI using Ultra-thin SiON Gate Dielectrics in pMOSFET devices.",
author = "Lai, \{Chao Sung\} and Huang, \{D. C.\} and Chung, \{S. S.\}",
year = "2007",
doi = "10.1109/ISDRS.2007.4422358",
language = "英语",
isbn = "1424418917",
series = "2007 International Semiconductor Device Research Symposium, ISDRS",
booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",
note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",
}