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Dynamic negative bias temperature instability in low-temperature poly-Si thin-film transistors

  • Chih Yang Chen*
  • , Tong Yi Wang
  • , Ming Wen Ma
  • , Wei Cheng Chen
  • , Hsiao Yi Lin
  • , Kuan Lin Yeh
  • , Shen De Wang
  • , Tan Fu Lei
  • *此作品的通信作者
  • National Yang Ming Chiao Tung University
  • Innolux Corporation

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

Dynamic negative bias temperature instability in p-channel low-temperature poly-Si thin-film transistors was studied in this paper. The degradation of the devices was found to be voltage and temperature dependent. In addition, the frequency and duty ratio of the gate pulse affects the degree of the device degradation. The mechanism of the device degradation was investigated, and a physical model is proposed to explain the mechanism.

原文英語
主出版物標題AD'07 - Proceedings of Asia Display 2007
頁面1233-1237
頁數5
出版狀態已出版 - 2007
對外發佈是
事件Asia Display 2007, AD'07 - Shanghai, 中國
持續時間: 12 03 2007 → 16 03 2007

出版系列

名字AD'07 - Proceedings of Asia Display 2007
卷2

Conference

ConferenceAsia Display 2007, AD'07
國家/地區中國
城市Shanghai
期間12/03/07 → 16/03/07

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