TY - JOUR
T1 - Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure
AU - Chen, Nie Chuan
AU - Tseng, Chien Yuan
AU - Lin, Hsin Tung
PY - 2009/1/15
Y1 - 2009/1/15
N2 - The effects of surface state on sheet carrier density in the Al0.17Ga0.83N/GaN heterostructure were investigated. The sheet carrier density obtained by Hall measurement was 1.803×1013 e/cm2. However, this value was inconsistent with the capacitance-voltage (C-V) measurements. This carrier density varied with the surface conditions of the samples that were prepared for Hall and C-V measurements. To study further the effects of the surface conditions on the sheet carrier densities, the samples were annealed at various temperatures and then characterized by Hall and work function measurements. The carrier densities increased with annealing temperatures. Meanwhile, the work functions decreased. Accordingly, the relationship between the surface states and the sheet carrier densities was determined.
AB - The effects of surface state on sheet carrier density in the Al0.17Ga0.83N/GaN heterostructure were investigated. The sheet carrier density obtained by Hall measurement was 1.803×1013 e/cm2. However, this value was inconsistent with the capacitance-voltage (C-V) measurements. This carrier density varied with the surface conditions of the samples that were prepared for Hall and C-V measurements. To study further the effects of the surface conditions on the sheet carrier densities, the samples were annealed at various temperatures and then characterized by Hall and work function measurements. The carrier densities increased with annealing temperatures. Meanwhile, the work functions decreased. Accordingly, the relationship between the surface states and the sheet carrier densities was determined.
KW - A1. Surface structure
KW - A3. Metal-organic chemical vapor deposition
KW - B1. Sapphire
KW - B2. Semiconducting III-V materials
KW - B3. Heterojunction semiconductor devices
KW - B3. High electron mobility transistors
UR - https://www.scopus.com/pages/publications/59749105748
U2 - 10.1016/j.jcrysgro.2008.09.102
DO - 10.1016/j.jcrysgro.2008.09.102
M3 - 文章
AN - SCOPUS:59749105748
SN - 0022-0248
VL - 311
SP - 859
EP - 862
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3
ER -