Effect of hydrogen implantation on low-temperature activation of boron in silicon

Jui Chang Lin; Bo Wen Lee; Ruey Dar Chang; Che Men Chu; Wei Yen Woon

doi:10.1016/j.nimb.2021.08.009

Effect of hydrogen implantation on low-temperature activation of boron in silicon

Jui Chang Lin, Bo Wen Lee, Ruey Dar Chang^*, Che Men Chu, Wei Yen Woon

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 期刊稿件 › 文章 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Understanding the behavior of dopant activation at low temperatures is necessary for three-dimensional integration of transistors. In this work, the impact of hydrogen coimplantation on boron activation was investigated at implantation doses below the amorphization threshold. The carrier depletion effect due to substrate doping was simulated to accurately characterize the initial activation behavior of boron. At temperatures higher than 400 °C, the boron activation level decreased as the hydrogen dose increased. The deactivation caused by hydrogen diminished after extended annealing at 500 °C. This indicated the passivation of boron by hydrogen. However, the boron activation in the sample implanted with hydrogen at a dose of 1 × 10¹⁵ cm⁻² was first degraded and then enhanced during annealing at 300 °C. The time-dependent activation behavior suggested the elimination of isolated defects via reactions associated with hydrogen migration.

原文	英語
頁（從 - 到）	58-63
頁數	6
期刊	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
卷	505
DOIs	https://doi.org/10.1016/j.nimb.2021.08.009
出版狀態	已出版 - 15 10 2021

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© 2021 Elsevier B.V.

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10.1016/j.nimb.2021.08.009

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title = "Effect of hydrogen implantation on low-temperature activation of boron in silicon",

abstract = "Understanding the behavior of dopant activation at low temperatures is necessary for three-dimensional integration of transistors. In this work, the impact of hydrogen coimplantation on boron activation was investigated at implantation doses below the amorphization threshold. The carrier depletion effect due to substrate doping was simulated to accurately characterize the initial activation behavior of boron. At temperatures higher than 400 °C, the boron activation level decreased as the hydrogen dose increased. The deactivation caused by hydrogen diminished after extended annealing at 500 °C. This indicated the passivation of boron by hydrogen. However, the boron activation in the sample implanted with hydrogen at a dose of 1 × 1015 cm−2 was first degraded and then enhanced during annealing at 300 °C. The time-dependent activation behavior suggested the elimination of isolated defects via reactions associated with hydrogen migration.",

keywords = "Activation, Boron, Defect, Hydrogen, Ion implantation",

author = "Lin, {Jui Chang} and Lee, {Bo Wen} and Chang, {Ruey Dar} and Chu, {Che Men} and Woon, {Wei Yen}",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

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doi = "10.1016/j.nimb.2021.08.009",

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TY - JOUR

T1 - Effect of hydrogen implantation on low-temperature activation of boron in silicon

AU - Lin, Jui Chang

AU - Lee, Bo Wen

AU - Chang, Ruey Dar

AU - Chu, Che Men

AU - Woon, Wei Yen

PY - 2021/10/15

Y1 - 2021/10/15

N2 - Understanding the behavior of dopant activation at low temperatures is necessary for three-dimensional integration of transistors. In this work, the impact of hydrogen coimplantation on boron activation was investigated at implantation doses below the amorphization threshold. The carrier depletion effect due to substrate doping was simulated to accurately characterize the initial activation behavior of boron. At temperatures higher than 400 °C, the boron activation level decreased as the hydrogen dose increased. The deactivation caused by hydrogen diminished after extended annealing at 500 °C. This indicated the passivation of boron by hydrogen. However, the boron activation in the sample implanted with hydrogen at a dose of 1 × 1015 cm−2 was first degraded and then enhanced during annealing at 300 °C. The time-dependent activation behavior suggested the elimination of isolated defects via reactions associated with hydrogen migration.

AB - Understanding the behavior of dopant activation at low temperatures is necessary for three-dimensional integration of transistors. In this work, the impact of hydrogen coimplantation on boron activation was investigated at implantation doses below the amorphization threshold. The carrier depletion effect due to substrate doping was simulated to accurately characterize the initial activation behavior of boron. At temperatures higher than 400 °C, the boron activation level decreased as the hydrogen dose increased. The deactivation caused by hydrogen diminished after extended annealing at 500 °C. This indicated the passivation of boron by hydrogen. However, the boron activation in the sample implanted with hydrogen at a dose of 1 × 1015 cm−2 was first degraded and then enhanced during annealing at 300 °C. The time-dependent activation behavior suggested the elimination of isolated defects via reactions associated with hydrogen migration.

KW - Activation

KW - Boron

KW - Defect

KW - Hydrogen

KW - Ion implantation

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U2 - 10.1016/j.nimb.2021.08.009

DO - 10.1016/j.nimb.2021.08.009

M3 - 文章

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SN - 0168-583X

VL - 505

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EP - 63

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Effect of hydrogen implantation on low-temperature activation of boron in silicon

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