Effect of in and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb₂TiO₅ Gate Dielectric

In this paper, we investigated the effect of In and Zn content on the structural properties and electrical characteristics of amorphous indium-zinc-tin oxide (α-InZnSnO) thin-film transistors (TFTs) featuring an Yb₂TiO₅ gate dielectric. The Yb₂TiO₅ α-InZnSnO TFT prepared at the 30-W condition exhibited better electrical characteristics in terms of a low threshold voltage of 0.52 V, a high I_ONI_OFF ratio of 1.1× 10⁸, a low subthreshold swing of 203 mV/decade, and a large field-effect mobility of 27.9 cm²/Vs. We attribute these results to the optimal Zn and Sn content on InZnSnO channel forming a smooth surface and thus reducing density of interface states at the oxide/channel interface.