Effect of in and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb2TiO5 Gate Dielectric

Tung Ming Pan; Bo Jung Peng; Jim Long Her; Bih Show Lou

doi:10.1109/TED.2017.2680410

Effect of in and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb₂TiO₅ Gate Dielectric

Tung Ming Pan^*
, Bo Jung Peng
, Jim Long Her
, Bih Show Lou

^*此作品的通信作者

Chang Gung Memorial Hospital
Chang Gung University

研究成果: 期刊稿件 › 文章 › 同行評審

9 引文斯高帕斯（Scopus）

摘要

In this paper, we investigated the effect of In and Zn content on the structural properties and electrical characteristics of amorphous indium-zinc-tin oxide (α-InZnSnO) thin-film transistors (TFTs) featuring an Yb₂TiO₅ gate dielectric. The Yb₂TiO₅ α-InZnSnO TFT prepared at the 30-W condition exhibited better electrical characteristics in terms of a low threshold voltage of 0.52 V, a high I_ONI_OFF ratio of 1.1× 10⁸, a low subthreshold swing of 203 mV/decade, and a large field-effect mobility of 27.9 cm²/Vs. We attribute these results to the optimal Zn and Sn content on InZnSnO channel forming a smooth surface and thus reducing density of interface states at the oxide/channel interface.

原文	英語
文章編號	7886364
頁（從 - 到）	2233-2238
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	64
發行號	5
DOIs	https://doi.org/10.1109/TED.2017.2680410
出版狀態	已出版 - 05 2017

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© 2016 IEEE.

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10.1109/TED.2017.2680410

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title = "Effect of in and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb2TiO5 Gate Dielectric",

abstract = "In this paper, we investigated the effect of In and Zn content on the structural properties and electrical characteristics of amorphous indium-zinc-tin oxide (α-InZnSnO) thin-film transistors (TFTs) featuring an Yb2TiO5 gate dielectric. The Yb2TiO5 α-InZnSnO TFT prepared at the 30-W condition exhibited better electrical characteristics in terms of a low threshold voltage of 0.52 V, a high IONIOFF ratio of 1.1{\texttimes} 108, a low subthreshold swing of 203 mV/decade, and a large field-effect mobility of 27.9 cm2/Vs. We attribute these results to the optimal Zn and Sn content on InZnSnO channel forming a smooth surface and thus reducing density of interface states at the oxide/channel interface.",

keywords = "Amorphous indium-zin-tin oxide (α-InZnSnO), YbTiO, thin-film transistor (TFT)",

author = "Pan, \{Tung Ming\} and Peng, \{Bo Jung\} and Her, \{Jim Long\} and Lou, \{Bih Show\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2017",

month = may,

doi = "10.1109/TED.2017.2680410",

language = "英语",

volume = "64",

pages = "2233--2238",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

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T1 - Effect of in and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb2TiO5 Gate Dielectric

AU - Pan, Tung Ming

AU - Peng, Bo Jung

AU - Her, Jim Long

AU - Lou, Bih Show

PY - 2017/5

Y1 - 2017/5

N2 - In this paper, we investigated the effect of In and Zn content on the structural properties and electrical characteristics of amorphous indium-zinc-tin oxide (α-InZnSnO) thin-film transistors (TFTs) featuring an Yb2TiO5 gate dielectric. The Yb2TiO5 α-InZnSnO TFT prepared at the 30-W condition exhibited better electrical characteristics in terms of a low threshold voltage of 0.52 V, a high IONIOFF ratio of 1.1× 108, a low subthreshold swing of 203 mV/decade, and a large field-effect mobility of 27.9 cm2/Vs. We attribute these results to the optimal Zn and Sn content on InZnSnO channel forming a smooth surface and thus reducing density of interface states at the oxide/channel interface.

AB - In this paper, we investigated the effect of In and Zn content on the structural properties and electrical characteristics of amorphous indium-zinc-tin oxide (α-InZnSnO) thin-film transistors (TFTs) featuring an Yb2TiO5 gate dielectric. The Yb2TiO5 α-InZnSnO TFT prepared at the 30-W condition exhibited better electrical characteristics in terms of a low threshold voltage of 0.52 V, a high IONIOFF ratio of 1.1× 108, a low subthreshold swing of 203 mV/decade, and a large field-effect mobility of 27.9 cm2/Vs. We attribute these results to the optimal Zn and Sn content on InZnSnO channel forming a smooth surface and thus reducing density of interface states at the oxide/channel interface.

KW - Amorphous indium-zin-tin oxide (α-InZnSnO)

KW - YbTiO

KW - thin-film transistor (TFT)

UR - https://www.scopus.com/pages/publications/85016391748

U2 - 10.1109/TED.2017.2680410

DO - 10.1109/TED.2017.2680410

M3 - 文章

AN - SCOPUS:85016391748

SN - 0018-9383

VL - 64

SP - 2233

EP - 2238

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

M1 - 7886364

ER -

Effect of in and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb2TiO5 Gate Dielectric

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Effect of in and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb₂TiO₅ Gate Dielectric