Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED

Chun Wei Liao; Yung Hsiang Lin; Cheng Ying Yen; Pei Wen Liu; Yuan Chieh Lu; Ray Ming Lin

doi:10.1109/ISDRS.2007.4422389

Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED

Chun Wei Liao^*
, Yung Hsiang Lin
, Cheng Ying Yen
, Pei Wen Liu
, Yuan Chieh Lu
, Ray Ming Lin

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

原文	英語
主出版物標題	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422389
出版狀態	已出版 - 2007
事件	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, 美國持續時間: 12 12 2007 → 14 12 2007

出版系列

名字	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
國家/地區	美國
城市	College Park, MD
期間	12/12/07 → 14/12/07

存取文件

10.1109/ISDRS.2007.4422389

其它文件與鏈接

Link to publication in Scopus

引用此

@inproceedings{85901f9bc2514617850b4d58dd66e324,

title = "Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED",

author = "Liao, \{Chun Wei\} and Lin, \{Yung Hsiang\} and Yen, \{Cheng Ying\} and Liu, \{Pei Wen\} and Lu, \{Yuan Chieh\} and Lin, \{Ray Ming\}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422389",

language = "英语",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Liao, CW, Lin, YH, Yen, CY, Liu, PW, Lu, YC & Lin, RM 2007, Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED. 於 2007 International Semiconductor Device Research Symposium, ISDRS., 4422389, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, 美國, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422389

TY - GEN

T1 - Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED

AU - Liao, Chun Wei

AU - Lin, Yung Hsiang

AU - Yen, Cheng Ying

AU - Liu, Pei Wen

AU - Lu, Yuan Chieh

AU - Lin, Ray Ming

PY - 2007

Y1 - 2007

UR - https://www.scopus.com/pages/publications/44949139726

U2 - 10.1109/ISDRS.2007.4422389

DO - 10.1109/ISDRS.2007.4422389

M3 - 会议稿件

AN - SCOPUS:44949139726

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -