Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm2O3 dielectrics

Fa Hsyang Chen; Meng Ning Hung; Jui Fu Yang; Shou Yi Kuo; Jim Long Her; Yasuhiro H. Matsuda; Tung Ming Pan

doi:10.1016/j.jpcs.2012.12.006

Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm₂O₃ dielectrics

Fa Hsyang Chen
, Meng Ning Hung
, Jui Fu Yang
, Shou Yi Kuo
, Jim Long Her
, Yasuhiro H. Matsuda
, Tung Ming Pan^*

^*此作品的通信作者

Chang Gung University
Yuan Ze University
The University of Tokyo

研究成果: 期刊稿件 › 文章 › 同行評審

43 引文斯高帕斯（Scopus）

摘要

We investigated the effect of surface roughness on the electrical characteristics in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) fabricating high-κ Sm₂O₃ gate dielectrics, prepared under different annealing temperatures. The high-κ Sm₂O₃ a-IGZO TFT device annealed at 200 °C exhibited better electrical characteristics, including a large field effect mobility of 6.25 cm²/V s, small threshold voltage of 0.79 V, low subthreshold swing of 354 mV/decade, and high I_on/I_off ratio of 3.1×10⁷. These results are attributed to the formation of smooth surface at the oxide/channel interface. Furthermore, the reliability of a Sm₂O₃ a-IGZO TFT device can be improved by oxygen annealing at low temperature.

原文	英語
頁（從 - 到）	570-574
頁數	5
期刊	Journal of Physics and Chemistry of Solids
卷	74
發行號	4
DOIs	https://doi.org/10.1016/j.jpcs.2012.12.006
出版狀態	已出版 - 04 2013

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10.1016/j.jpcs.2012.12.006

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title = "Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm2O3 dielectrics",

abstract = "We investigated the effect of surface roughness on the electrical characteristics in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) fabricating high-κ Sm2O3 gate dielectrics, prepared under different annealing temperatures. The high-κ Sm2O3 a-IGZO TFT device annealed at 200 °C exhibited better electrical characteristics, including a large field effect mobility of 6.25 cm2/V s, small threshold voltage of 0.79 V, low subthreshold swing of 354 mV/decade, and high Ion/Ioff ratio of 3.1×107. These results are attributed to the formation of smooth surface at the oxide/channel interface. Furthermore, the reliability of a Sm2O3 a-IGZO TFT device can be improved by oxygen annealing at low temperature.",

keywords = "A. Amorphous materials, A. Oxides, A. Semiconductors, D. Electrical properties",

author = "Chen, \{Fa Hsyang\} and Hung, \{Meng Ning\} and Yang, \{Jui Fu\} and Kuo, \{Shou Yi\} and Her, \{Jim Long\} and Matsuda, \{Yasuhiro H.\} and Pan, \{Tung Ming\}",

year = "2013",

month = apr,

doi = "10.1016/j.jpcs.2012.12.006",

language = "英语",

volume = "74",

pages = "570--574",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

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TY - JOUR

T1 - Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm2O3 dielectrics

AU - Chen, Fa Hsyang

AU - Hung, Meng Ning

AU - Yang, Jui Fu

AU - Kuo, Shou Yi

AU - Her, Jim Long

AU - Matsuda, Yasuhiro H.

AU - Pan, Tung Ming

PY - 2013/4

Y1 - 2013/4

N2 - We investigated the effect of surface roughness on the electrical characteristics in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) fabricating high-κ Sm2O3 gate dielectrics, prepared under different annealing temperatures. The high-κ Sm2O3 a-IGZO TFT device annealed at 200 °C exhibited better electrical characteristics, including a large field effect mobility of 6.25 cm2/V s, small threshold voltage of 0.79 V, low subthreshold swing of 354 mV/decade, and high Ion/Ioff ratio of 3.1×107. These results are attributed to the formation of smooth surface at the oxide/channel interface. Furthermore, the reliability of a Sm2O3 a-IGZO TFT device can be improved by oxygen annealing at low temperature.

AB - We investigated the effect of surface roughness on the electrical characteristics in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) fabricating high-κ Sm2O3 gate dielectrics, prepared under different annealing temperatures. The high-κ Sm2O3 a-IGZO TFT device annealed at 200 °C exhibited better electrical characteristics, including a large field effect mobility of 6.25 cm2/V s, small threshold voltage of 0.79 V, low subthreshold swing of 354 mV/decade, and high Ion/Ioff ratio of 3.1×107. These results are attributed to the formation of smooth surface at the oxide/channel interface. Furthermore, the reliability of a Sm2O3 a-IGZO TFT device can be improved by oxygen annealing at low temperature.

KW - A. Amorphous materials

KW - A. Oxides

KW - A. Semiconductors

KW - D. Electrical properties

UR - https://www.scopus.com/pages/publications/84874115716

U2 - 10.1016/j.jpcs.2012.12.006

DO - 10.1016/j.jpcs.2012.12.006

M3 - 文章

AN - SCOPUS:84874115716

SN - 0022-3697

VL - 74

SP - 570

EP - 574

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 4

ER -

Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm2O3 dielectrics

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Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm₂O₃ dielectrics