Effect of ultraviolet light exposure on a HfOx RRAM device

Kou Chen Liu; Wen Hsien Tzeng; Kow Ming Chang; Yi Chun Chan; Chun Chih Kuo

doi:10.1016/j.tsf.2010.05.024

Effect of ultraviolet light exposure on a HfO_x RRAM device

Kou Chen Liu^*, Wen Hsien Tzeng, Kow Ming Chang, Yi Chun Chan, Chun Chih Kuo

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 期刊稿件 › 文章 › 同行評審

19 引文斯高帕斯（Scopus）

摘要

This paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfO_x/TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfO_x/TiN sample. Under the appropriate exposure time, the samples were able to achieve the superior electrical characteristics and reduced resistance dispersion. We suggest that the improvement of switching characteristics and resistance dispersion is related to the oxygen-rich HfO ₂ layer formed at the M/O interface caused by UV light. This indicates that UV laser exposure is a critical issue in the electrical characteristics of RRAM devices.

原文	英語
頁（從 - 到）	7460-7463
頁數	4
期刊	Thin Solid Films
卷	518
發行號	24
DOIs	https://doi.org/10.1016/j.tsf.2010.05.024
出版狀態	已出版 - 01 10 2010

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10.1016/j.tsf.2010.05.024

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@article{774494e297a7466fa14aedbc3dbede65,

title = "Effect of ultraviolet light exposure on a HfOx RRAM device",

abstract = "This paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfOx/TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfOx/TiN sample. Under the appropriate exposure time, the samples were able to achieve the superior electrical characteristics and reduced resistance dispersion. We suggest that the improvement of switching characteristics and resistance dispersion is related to the oxygen-rich HfO 2 layer formed at the M/O interface caused by UV light. This indicates that UV laser exposure is a critical issue in the electrical characteristics of RRAM devices.",

keywords = "ITO, RRAM, Resistive memory, UV light",

author = "Liu, {Kou Chen} and Tzeng, {Wen Hsien} and Chang, {Kow Ming} and Chan, {Yi Chun} and Kuo, {Chun Chih}",

year = "2010",

month = oct,

day = "1",

doi = "10.1016/j.tsf.2010.05.024",

language = "英语",

volume = "518",

pages = "7460--7463",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Effect of ultraviolet light exposure on a HfOx RRAM device

AU - Liu, Kou Chen

AU - Tzeng, Wen Hsien

AU - Chang, Kow Ming

AU - Chan, Yi Chun

AU - Kuo, Chun Chih

PY - 2010/10/1

Y1 - 2010/10/1

N2 - This paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfOx/TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfOx/TiN sample. Under the appropriate exposure time, the samples were able to achieve the superior electrical characteristics and reduced resistance dispersion. We suggest that the improvement of switching characteristics and resistance dispersion is related to the oxygen-rich HfO 2 layer formed at the M/O interface caused by UV light. This indicates that UV laser exposure is a critical issue in the electrical characteristics of RRAM devices.

AB - This paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfOx/TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfOx/TiN sample. Under the appropriate exposure time, the samples were able to achieve the superior electrical characteristics and reduced resistance dispersion. We suggest that the improvement of switching characteristics and resistance dispersion is related to the oxygen-rich HfO 2 layer formed at the M/O interface caused by UV light. This indicates that UV laser exposure is a critical issue in the electrical characteristics of RRAM devices.

KW - ITO

KW - RRAM

KW - Resistive memory

KW - UV light

UR - http://www.scopus.com/inward/record.url?scp=77956879708&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2010.05.024

DO - 10.1016/j.tsf.2010.05.024

M3 - 文章

AN - SCOPUS:77956879708

SN - 0040-6090

VL - 518

SP - 7460

EP - 7463

JO - Thin Solid Films

JF - Thin Solid Films

IS - 24

ER -

Effect of ultraviolet light exposure on a HfOx RRAM device

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Effect of ultraviolet light exposure on a HfO_x RRAM device