Effective suppression of surface recombination of AlGaInP light-emitting diodes by sulfur passivation

Ming Jer Jeng; Yuan Hsiao Chang; Liann Be Chang; Mei Jiau Huang; Jia Chuan Lin

doi:10.1143/JJAP.46.L291

Effective suppression of surface recombination of AlGaInP light-emitting diodes by sulfur passivation

Ming Jer Jeng^*
, Yuan Hsiao Chang
, Liann Be Chang
, Mei Jiau Huang
, Jia Chuan Lin

^*此作品的通信作者

Chang Gung University
National Defense University Taiwan
St. John's University Taiwan

研究成果: 期刊稿件 › 文章 › 同行評審

15 引文斯高帕斯（Scopus）

摘要

Sulfur passivation has been shown to be effective for light intensity enhancement of AlGaInP light-emitting diodes (LEDs). The scribed AlGaInP LED die was dipped in (NH₄)₂S_x to passivate the LED surface. An effective suppression of surface recombination was observed. The leakage current of AlGaInP LEDs decreased from 1.4 x 10^-6A (untreated samples) to 7 x 10^-7 A ((NH₄)₂S _x-treated ones) at a reverse bias of 10 V. A 5-fold increase in the light intensity of the (NH₄)₂S_x-treated AlGaInP LEDs was observed relative to that of the untreated LEDs.

原文	英語
頁（從 - 到）	L291-L293
期刊	Japanese Journal of Applied Physics
卷	46
發行號	12-16
DOIs	https://doi.org/10.1143/JJAP.46.L291
出版狀態	已出版 - 13 04 2007
對外發佈	是

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title = "Effective suppression of surface recombination of AlGaInP light-emitting diodes by sulfur passivation",

abstract = "Sulfur passivation has been shown to be effective for light intensity enhancement of AlGaInP light-emitting diodes (LEDs). The scribed AlGaInP LED die was dipped in (NH4)2Sx to passivate the LED surface. An effective suppression of surface recombination was observed. The leakage current of AlGaInP LEDs decreased from 1.4 x 10-6A (untreated samples) to 7 x 10-7 A ((NH4)2S x-treated ones) at a reverse bias of 10 V. A 5-fold increase in the light intensity of the (NH4)2Sx-treated AlGaInP LEDs was observed relative to that of the untreated LEDs.",

keywords = "(NH)S, AlGaInP, Light intensity, Light-emitting diode (LED), Sulfur passivation",

author = "Jeng, \{Ming Jer\} and Chang, \{Yuan Hsiao\} and Chang, \{Liann Be\} and Huang, \{Mei Jiau\} and Lin, \{Jia Chuan\}",

year = "2007",

month = apr,

day = "13",

doi = "10.1143/JJAP.46.L291",

language = "英语",

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TY - JOUR

T1 - Effective suppression of surface recombination of AlGaInP light-emitting diodes by sulfur passivation

AU - Jeng, Ming Jer

AU - Chang, Yuan Hsiao

AU - Chang, Liann Be

AU - Huang, Mei Jiau

AU - Lin, Jia Chuan

PY - 2007/4/13

Y1 - 2007/4/13

N2 - Sulfur passivation has been shown to be effective for light intensity enhancement of AlGaInP light-emitting diodes (LEDs). The scribed AlGaInP LED die was dipped in (NH4)2Sx to passivate the LED surface. An effective suppression of surface recombination was observed. The leakage current of AlGaInP LEDs decreased from 1.4 x 10-6A (untreated samples) to 7 x 10-7 A ((NH4)2S x-treated ones) at a reverse bias of 10 V. A 5-fold increase in the light intensity of the (NH4)2Sx-treated AlGaInP LEDs was observed relative to that of the untreated LEDs.

AB - Sulfur passivation has been shown to be effective for light intensity enhancement of AlGaInP light-emitting diodes (LEDs). The scribed AlGaInP LED die was dipped in (NH4)2Sx to passivate the LED surface. An effective suppression of surface recombination was observed. The leakage current of AlGaInP LEDs decreased from 1.4 x 10-6A (untreated samples) to 7 x 10-7 A ((NH4)2S x-treated ones) at a reverse bias of 10 V. A 5-fold increase in the light intensity of the (NH4)2Sx-treated AlGaInP LEDs was observed relative to that of the untreated LEDs.

KW - (NH)S

KW - AlGaInP

KW - Light intensity

KW - Light-emitting diode (LED)

KW - Sulfur passivation

UR - https://www.scopus.com/pages/publications/34547895094

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DO - 10.1143/JJAP.46.L291

M3 - 文章

AN - SCOPUS:34547895094

SN - 0021-4922

VL - 46

SP - L291-L293

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12-16

ER -

Effective suppression of surface recombination of AlGaInP light-emitting diodes by sulfur passivation

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