摘要
In this paper, we developed high-k Tb2O3 poly-Si thin-film transistors (TFTs) using different FTb4 plasma power treatments. The high- k Tb2O3 poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high ITbON/IOFF current ratio. This result is attributed to the incorporation of fluorine atoms into the Tb2O3/poly-Si interface to reduce the trap-state density. The high- k Tb2O3 poly-Si TFT prepared under a 20-W CF4 plasma power also enhanced electrical reliabilities, including hot carrier and positive bias temperature instability. All of these results suggest that the CF4 plasma-treated poly-Si Tb 2O3 TFT is a good candidate for high-performance low-temperature poly-Si TFTs.
原文 | 英語 |
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文章編號 | 5464298 |
頁(從 - 到) | 1519-1526 |
頁數 | 8 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 57 |
發行號 | 7 |
DOIs | |
出版狀態 | 已出版 - 07 2010 |