Effects of CF4 plasma treatment on the electrical characteristics of poly-silicon TFTs using a Tb2O3 gate dielectric

Tung Ming Pan*, Zhi Hong Li, Chih Kang Deng

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this paper, we developed high-k Tb2O3 poly-Si thin-film transistors (TFTs) using different FTb4 plasma power treatments. The high- k Tb2O3 poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high ITbON/IOFF current ratio. This result is attributed to the incorporation of fluorine atoms into the Tb2O3/poly-Si interface to reduce the trap-state density. The high- k Tb2O3 poly-Si TFT prepared under a 20-W CF4 plasma power also enhanced electrical reliabilities, including hot carrier and positive bias temperature instability. All of these results suggest that the CF4 plasma-treated poly-Si Tb 2O3 TFT is a good candidate for high-performance low-temperature poly-Si TFTs.

原文英語
文章編號5464298
頁(從 - 到)1519-1526
頁數8
期刊IEEE Transactions on Electron Devices
57
發行號7
DOIs
出版狀態已出版 - 07 2010

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