@inproceedings{a6db54d4a5be42b0bd87aa80742b5769,
title = "Effects of HfO 2 trapping layer in Gd 2O 3 nanocrystal nonvolatile memory with multi-tunneling layers",
abstract = "Recently, nanocrystal (NC) memory such as gadolinium oxide NC (Gd 2O 3-NC) memory performed by the band-gap offset of a crystallized Gd 2O 3-NC dots surrounded by the amorphous Gd 2O 3 dielectrics has been proposed [1-2]. The crystallization temperature was optimized and the excellent memory properties were obtained [2]. In addition, to improve the programming/erasing (P/E) and retention characteristics of future nonvolatile memory, the BE-SONOS with SiO 2/SiN/ SiO 2 (ONO) tunneling layer has been proposed due to the suitable band engineering and large physical thickness [3]. In this paper, the novel Gd 2O 3-NC memory with HfO 2 charge trapping layer was investigated and multi-tunneling layer (Al 2O 3/IL-SiO 2) was applied to further improve the performance. The charge storage characteristic was related to the charge trapping phenomenon of HfO 2 layer.",
author = "Chen, {Chia Hsin} and Liao, {Chin Hsiang} and Lin, {Chih Ting} and Wang, {Jer Chyi} and Huang, {Po Wei} and Lai, {Chao Sung}",
year = "2011",
doi = "10.1109/EDSSC.2011.6117603",
language = "英语",
isbn = "9781457719974",
series = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",
booktitle = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",
note = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 ; Conference date: 17-11-2011 Through 18-11-2011",
}