Effects of hydrogen treatment on ohmic contacts to p-type GaN films

Bohr Ran Huang*, Chia Hui Chou, Wen Cheng Ke, Yi Lun Chou, Chia Lung Tsai, Meng Chyi Wu

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

6 引文 斯高帕斯(Scopus)

摘要

This study investigated the effects of hydrogen (H 2 ) treatment on metal contacts to Mg-doped p-GaN films by Hall-effect measurement, current-voltage (I-V) analyzer and X-ray photoemission spectra (XPS). The interfacial oxide layer on the p-GaN surface was found to be the main reason for causing the nonlinear I-V behavior of the untreated p-GaN films. The increased nitrogen vacancy (V N ) density due to increased GaN decomposition rate at higherature hydrogen treatment is believed to form high density surface states on the surface of p-GaN films. Compared to untreated p-GaN films, the surface Fermi level determined by the Ga 2p core-level peak on 1000 °C H 2 -treated p-GaN films lies about ∼2.1 eV closer to the conduction band edge (i.e., the surface inverted to n-type behavior). The reduction in barrier height due to the high surface state density pinned the surface Fermi level close to the conduction band edge, and allowed the electrons to easily flow over the barrier from the metal into the p-GaN films. Thus, a good ohmic contact was achieved on the p-GaN films by the surface inversion method.

原文英語
頁(從 - 到)7490-7493
頁數4
期刊Applied Surface Science
257
發行號17
DOIs
出版狀態已出版 - 15 06 2011

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