@article{e8213530c44644d0a26db2304d7d86aa,
title = "Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers",
abstract = "The effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers were investigated. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The N-treated film had a higher accumulation capacitance, lower leakage current density and higher breakdown field.",
author = "R. Mahapatra and S. Maikap and Lee, {Je Hun} and Kar, {G. S.} and A. Dhar and Hwang, {Nong M.} and Kim, {Doh Y.} and Mathur, {B. K.} and Ray, {S. K.}",
year = "2003",
month = jun,
day = "16",
doi = "10.1063/1.1583143",
language = "英语",
volume = "82",
pages = "4331--4333",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "24",
}