Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers

R. Mahapatra; S. Maikap; Je Hun Lee; G. S. Kar; A. Dhar; Nong M. Hwang; Doh Y. Kim; B. K. Mathur; S. K. Ray

doi:10.1063/1.1583143

Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO₂ gate dielectrics on partially strain-compensated SiGeC/Si heterolayers

R. Mahapatra
, S. Maikap
, Je Hun Lee
, G. S. Kar
, A. Dhar
, Nong M. Hwang
, Doh Y. Kim
, B. K. Mathur
, S. K. Ray^*

^*此作品的通信作者

Indian Institute of Technology Kharagpur
Seoul National University

研究成果: 期刊稿件 › 文章 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

The effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO₂ gate dielectrics on partially strain-compensated SiGeC/Si heterolayers were investigated. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The N-treated film had a higher accumulation capacitance, lower leakage current density and higher breakdown field.

原文	英語
頁（從 - 到）	4331-4333
頁數	3
期刊	Applied Physics Letters
卷	82
發行號	24
DOIs	https://doi.org/10.1063/1.1583143
出版狀態	已出版 - 16 06 2003
對外發佈	是

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@article{e8213530c44644d0a26db2304d7d86aa,

title = "Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers",

abstract = "The effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers were investigated. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The N-treated film had a higher accumulation capacitance, lower leakage current density and higher breakdown field.",

author = "R. Mahapatra and S. Maikap and Lee, \{Je Hun\} and Kar, \{G. S.\} and A. Dhar and Hwang, \{Nong M.\} and Kim, \{Doh Y.\} and Mathur, \{B. K.\} and Ray, \{S. K.\}",

year = "2003",

month = jun,

day = "16",

doi = "10.1063/1.1583143",

language = "英语",

volume = "82",

pages = "4331--4333",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers

AU - Mahapatra, R.

AU - Maikap, S.

AU - Lee, Je Hun

AU - Kar, G. S.

AU - Dhar, A.

AU - Hwang, Nong M.

AU - Kim, Doh Y.

AU - Mathur, B. K.

AU - Ray, S. K.

PY - 2003/6/16

Y1 - 2003/6/16

N2 - The effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers were investigated. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The N-treated film had a higher accumulation capacitance, lower leakage current density and higher breakdown field.

AB - The effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers were investigated. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The N-treated film had a higher accumulation capacitance, lower leakage current density and higher breakdown field.

UR - https://www.scopus.com/pages/publications/0038450094

U2 - 10.1063/1.1583143

DO - 10.1063/1.1583143

M3 - 文章

AN - SCOPUS:0038450094

SN - 0003-6951

VL - 82

SP - 4331

EP - 4333

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers

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Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO₂ gate dielectrics on partially strain-compensated SiGeC/Si heterolayers