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Effects of oxygen content on the structural and electrical properties of Thin Yb
2
O
3
gate dielectrics
Tung Ming Pan
*
, Wei Shiang Huang
*
此作品的通信作者
電子工程學系(含學碩博士班)
Chang Gung University
研究成果
:
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同行評審
25
引文 斯高帕斯(Scopus)
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深入研究「Effects of oxygen content on the structural and electrical properties of Thin Yb
2
O
3
gate dielectrics」主題。共同形成了獨特的指紋。
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Chemistry
Liquid Film
100%
Electrical Property
100%
Dioxygen
100%
Dielectric Material
100%
Optimization
33%
X-Ray Diffraction
33%
Reaction Temperature
33%
Voltage
33%
Concentration
33%
Reduction
33%
Thickness
33%
Interface Trap
33%
Atomic Force Microscopy
33%
X-Ray Photoelectron Spectroscopy
33%
Silicon
33%
Argon
33%
Metal Oxide
33%
Reactive Sputtering
33%
Slope
33%
Trap Density Measurement
33%
Surface Roughness
33%
Physics
Oxygen
100%
Dielectrics
100%
Electrical Properties
100%
Capacitance
66%
Emission
66%
Growth
33%
Substrates
33%
Temperature
33%
Ratios
33%
Metal
33%
Hysteresis
33%
Sputtering
33%
Optimization
33%
Surface Roughness
33%
X Ray Diffraction
33%
X Ray Spectroscopy
33%
Electric Potential
33%
Silicon
33%
Atomic Force Microscopy
33%
Minimal Surface
33%
Material Science
Electrical Property
100%
Dielectric Material
100%
Capacitance
66%
Temperature
33%
Density
33%
Film
33%
X-Ray Diffraction
33%
Surface Roughness
33%
Sputtering
33%
Structural Property
33%
Atomic Force Microscopy
33%
Metal Oxide
33%
Argon
33%