Electric property improvement and boron penetration suppression in metal-oxide-Si capacitors by amorphous-Si gate electrode and two-step nitridation

The gate electrodes consisting of films deposited using amorphous silicon oxynitride were used to improve the electric properties in MOS capacitors. The reduction in the penetration of boron was also performed. The reduction of boron penetration is attributed to the nitrogen incorporated at the gate electrode/gate oxynitride interface. The result shows the improvement of electric property in MOS capacitors and usefulness of gate electrode and gate dielectric in the deep submicron MOS transistors.