Electric property improvement and boron penetration suppression in metal-oxide-Si capacitors by amorphous-Si gate electrode and two-step nitridation
- Jung Hsiang Lee
- , Wu Shiung Feng
- , Tzann Cherng Juang
- , Kuei Shu Chang-Liao*
*此作品的通信作者
- National Taiwan University
- National Tsing Hua University
研究成果: 期刊稿件 › 會議文章 › 同行評審
2
引文
斯高帕斯（Scopus）