Electric property improvement and boron penetration suppression in metal-oxide-Si capacitors by amorphous-Si gate electrode and two-step nitridation

Jung Hsiang Lee, Wu Shiung Feng, Tzann Cherng Juang, Kuei Shu Chang-Liao*

*此作品的通信作者

研究成果: 期刊稿件 › 會議文章 › 同行評審

2 引文 斯高帕斯（Scopus）

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Material Science