Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers

C. L. Sun; S. Y. Chen; M. Y. Yang; Albert Chin

doi:10.1016/S0254-0584(02)00199-2

Electrical and structural characteristics of PbTiO₃ thin films with ultra-thin Al₂O₃ buffer layers

C. L. Sun
, S. Y. Chen^*
, M. Y. Yang
, Albert Chin

^*此作品的通信作者

National Yang Ming Chiao Tung University

研究成果: 期刊稿件 › 文章 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Polycrystalline PbTiO₃ thin films have been prepared on Si substrates with ultra-thin SiO₂ and Al₂O₃ buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO₃/Al₂O₃ stacked dielectric is 3.3 V larger than that on SiO₂. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO₃/Al₂O₃ and the PbTiO₃ films on Al₂O₃ have the dielectric constant of 116 larger than 42 of PbTiO₃ films on SiO₂. The leakage current density of PbTiO₃/Al₂O₃ dielectric is 1.3 × 10^-7 A cm^-2 at -2.5 V, which is low enough for deep sub-μm application.

原文	英語
頁（從 - 到）	412-415
頁數	4
期刊	Materials Chemistry and Physics
卷	78
發行號	2
DOIs	https://doi.org/10.1016/S0254-0584(02)00199-2
出版狀態	已出版 - 17 02 2003
對外發佈	是

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@article{a52b683311c54143ab8ae3a5af90a12a,

title = "Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers",

abstract = "Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3 V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al2O3 and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 {\texttimes} 10-7 A cm-2 at -2.5 V, which is low enough for deep sub-μm application.",

keywords = "Capacitance-voltage, Dielectric constant, PbTiO, Thin films",

author = "Sun, \{C. L.\} and Chen, \{S. Y.\} and Yang, \{M. Y.\} and Albert Chin",

year = "2003",

month = feb,

day = "17",

doi = "10.1016/S0254-0584(02)00199-2",

language = "英语",

volume = "78",

pages = "412--415",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers

AU - Sun, C. L.

AU - Chen, S. Y.

AU - Yang, M. Y.

AU - Chin, Albert

PY - 2003/2/17

Y1 - 2003/2/17

N2 - Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3 V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al2O3 and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 × 10-7 A cm-2 at -2.5 V, which is low enough for deep sub-μm application.

AB - Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3 V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al2O3 and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 × 10-7 A cm-2 at -2.5 V, which is low enough for deep sub-μm application.

KW - Capacitance-voltage

KW - Dielectric constant

KW - PbTiO

KW - Thin films

UR - https://www.scopus.com/pages/publications/0037449973

U2 - 10.1016/S0254-0584(02)00199-2

DO - 10.1016/S0254-0584(02)00199-2

M3 - 文章

AN - SCOPUS:0037449973

SN - 0254-0584

VL - 78

SP - 412

EP - 415

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2

ER -

Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers

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Electrical and structural characteristics of PbTiO₃ thin films with ultra-thin Al₂O₃ buffer layers