Electrical-stress effects and device modeling of 0.18-μm RF MOSFETs

H. L. Kao; Albert Chin; C. C. Liao; C. C. Chen; Sean P. McAlister; C. C. Chi

doi:10.1109/TED.2006.870284

Electrical-stress effects and device modeling of 0.18-μm RF MOSFETs

H. L. Kao^*
, Albert Chin
, C. C. Liao
, C. C. Chen
, Sean P. McAlister
, C. C. Chi

^*此作品的通信作者

National Yang Ming Chiao Tung University
National Research Council of Canada
National Tsing Hua University

研究成果: 期刊稿件 › 文章 › 同行評審

16 引文斯高帕斯（Scopus）

摘要

In this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure NF_min) of RF MOSFETs. A low NF_min of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-μm MOSFETs, without de-embedding. Using an analytical expression for NF_min, we have developed a self-consistent dc current-voltage, S-parameter, and NF_min model, where the simulated results match the measured device characteristics well, both before and after electrical stress.

原文	英語
頁（從 - 到）	636-642
頁數	7
期刊	IEEE Transactions on Electron Devices
卷	53
發行號	4
DOIs	https://doi.org/10.1109/TED.2006.870284
出版狀態	已出版 - 04 2006
對外發佈	是

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@article{d7c47c69bde842c19c89a9079a7e0cae,

title = "Electrical-stress effects and device modeling of 0.18-μm RF MOSFETs",

abstract = "In this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure NFmin) of RF MOSFETs. A low NFmin of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-μm MOSFETs, without de-embedding. Using an analytical expression for NFmin, we have developed a self-consistent dc current-voltage, S-parameter, and NFmin model, where the simulated results match the measured device characteristics well, both before and after electrical stress.",

keywords = "Lifetime, Minimum noise figure (NF), Model, RF noise, Stress",

author = "Kao, \{H. L.\} and Albert Chin and Liao, \{C. C.\} and Chen, \{C. C.\} and McAlister, \{Sean P.\} and Chi, \{C. C.\}",

year = "2006",

month = apr,

doi = "10.1109/TED.2006.870284",

language = "英语",

volume = "53",

pages = "636--642",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Electrical-stress effects and device modeling of 0.18-μm RF MOSFETs

AU - Kao, H. L.

AU - Chin, Albert

AU - Liao, C. C.

AU - Chen, C. C.

AU - McAlister, Sean P.

AU - Chi, C. C.

PY - 2006/4

Y1 - 2006/4

N2 - In this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure NFmin) of RF MOSFETs. A low NFmin of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-μm MOSFETs, without de-embedding. Using an analytical expression for NFmin, we have developed a self-consistent dc current-voltage, S-parameter, and NFmin model, where the simulated results match the measured device characteristics well, both before and after electrical stress.

AB - In this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure NFmin) of RF MOSFETs. A low NFmin of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-μm MOSFETs, without de-embedding. Using an analytical expression for NFmin, we have developed a self-consistent dc current-voltage, S-parameter, and NFmin model, where the simulated results match the measured device characteristics well, both before and after electrical stress.

KW - Lifetime

KW - Minimum noise figure (NF)

KW - Model

KW - RF noise

KW - Stress

UR - https://www.scopus.com/pages/publications/33645731912

U2 - 10.1109/TED.2006.870284

DO - 10.1109/TED.2006.870284

M3 - 文章

AN - SCOPUS:33645731912

SN - 0018-9383

VL - 53

SP - 636

EP - 642

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

Electrical-stress effects and device modeling of 0.18-μm RF MOSFETs

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