Empirical model of Si3N4 erosion in the direct STI CMP process for advanced nanometer generation

Chi Hsiang Kuo; Shing Yih Shih; Chien Mao Liao; Chang Rang Wu; Jeng Ping Lin; Pei Ing Lee

Empirical model of Si₃N₄ erosion in the direct STI CMP process for advanced nanometer generation

Chi Hsiang Kuo, Shing Yih Shih, Chien Mao Liao, Chang Rang Wu, Jeng Ping Lin, Pei Ing Lee

Nanya Technology Corporation

研究成果: 會議稿件的類型 › 論文 › 同行評審

摘要

The STI CMP process is inherent in the pattern dependence. As the chip size continues to shrink, the issue of Si₃N₄ erosion in the STI CMP process leading to worse STI step height non-uniformity and device detraction will become a significant challenge. In this paper, empirical models of Si₃N₄ erosion, derived from the studies of a nanometer feature CMP test mask with two kinds of ceria-based slurries, have been proposed to investigate the limitation of the STI CMP process. Unless the effect of active area (AA) pattern density, Si₃N₄ erosion will rise abruptly as AA width shrinks to nanometer nodes, under 50% AA pattern density especially. Using empirical models, Si₃N₄ erosion can be predicted for nanometer generation and beyond in advance.

原文	英語
頁面	190-193
頁數	4
出版狀態	已出版 - 2006
對外發佈	是
事件	11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006 - Fremont, CA, 美國持續時間: 21 02 2006 → 23 02 2006

Conference

Conference	11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006
國家/地區	美國
城市	Fremont, CA
期間	21/02/06 → 23/02/06

其它文件與鏈接

Link to publication in Scopus

引用此

@conference{d716c630072c4c7da468552d8117e8c8,

title = "Empirical model of Si3N4 erosion in the direct STI CMP process for advanced nanometer generation",

abstract = "The STI CMP process is inherent in the pattern dependence. As the chip size continues to shrink, the issue of Si3N4 erosion in the STI CMP process leading to worse STI step height non-uniformity and device detraction will become a significant challenge. In this paper, empirical models of Si3N4 erosion, derived from the studies of a nanometer feature CMP test mask with two kinds of ceria-based slurries, have been proposed to investigate the limitation of the STI CMP process. Unless the effect of active area (AA) pattern density, Si3N4 erosion will rise abruptly as AA width shrinks to nanometer nodes, under 50% AA pattern density especially. Using empirical models, Si3N4 erosion can be predicted for nanometer generation and beyond in advance.",

author = "Kuo, {Chi Hsiang} and Shih, {Shing Yih} and Liao, {Chien Mao} and Wu, {Chang Rang} and Lin, {Jeng Ping} and Lee, {Pei Ing}",

year = "2006",

language = "英语",

pages = "190--193",

note = "11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006 ; Conference date: 21-02-2006 Through 23-02-2006",

}

Empirical model of Si₃N₄ erosion in the direct STI CMP process for advanced nanometer generation. / Kuo, Chi Hsiang; Shih, Shing Yih; Liao, Chien Mao 等.
2006. 190-193 論文發表於 11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006, Fremont, CA, 美國.

研究成果: 會議稿件的類型 › 論文 › 同行評審

TY - CONF

T1 - Empirical model of Si3N4 erosion in the direct STI CMP process for advanced nanometer generation

AU - Kuo, Chi Hsiang

AU - Shih, Shing Yih

AU - Liao, Chien Mao

AU - Wu, Chang Rang

AU - Lin, Jeng Ping

AU - Lee, Pei Ing

PY - 2006

Y1 - 2006

N2 - The STI CMP process is inherent in the pattern dependence. As the chip size continues to shrink, the issue of Si3N4 erosion in the STI CMP process leading to worse STI step height non-uniformity and device detraction will become a significant challenge. In this paper, empirical models of Si3N4 erosion, derived from the studies of a nanometer feature CMP test mask with two kinds of ceria-based slurries, have been proposed to investigate the limitation of the STI CMP process. Unless the effect of active area (AA) pattern density, Si3N4 erosion will rise abruptly as AA width shrinks to nanometer nodes, under 50% AA pattern density especially. Using empirical models, Si3N4 erosion can be predicted for nanometer generation and beyond in advance.

AB - The STI CMP process is inherent in the pattern dependence. As the chip size continues to shrink, the issue of Si3N4 erosion in the STI CMP process leading to worse STI step height non-uniformity and device detraction will become a significant challenge. In this paper, empirical models of Si3N4 erosion, derived from the studies of a nanometer feature CMP test mask with two kinds of ceria-based slurries, have been proposed to investigate the limitation of the STI CMP process. Unless the effect of active area (AA) pattern density, Si3N4 erosion will rise abruptly as AA width shrinks to nanometer nodes, under 50% AA pattern density especially. Using empirical models, Si3N4 erosion can be predicted for nanometer generation and beyond in advance.

UR - http://www.scopus.com/inward/record.url?scp=84888270472&partnerID=8YFLogxK

M3 - 论文

AN - SCOPUS:84888270472

SP - 190

EP - 193

T2 - 11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006

Y2 - 21 February 2006 through 23 February 2006

ER -

Empirical model of Si3N4 erosion in the direct STI CMP process for advanced nanometer generation

摘要

Conference

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引用此

Empirical model of Si₃N₄ erosion in the direct STI CMP process for advanced nanometer generation