@inproceedings{84cb8ca0ae58490f9f1e915357a07894,
title = "Energy-band engineering and characterization improvements by fluorine incorporation on Gd2O3 nanocrystal memory",
abstract = "As a potential candidate for future nonvolatile memory (NVM) application, the discrete charge storage nodes formed as the nanocrystal (NC) structure has been caught much attention. Among the NC materials, high-k metal oxide is the unique one due to the mixed chemical reactions during high temperature forming process. The over-view of gadolinium oxide nanocrystal (Gd2O 3-NC) memory is revealed in this paper. Gd2O 3-NC was formed by one step rapid thermal annealing treated on the amorphous Gd2O3 film prepared by sputter system. The optical tests were conducted to exam the bandgap value of the Gd 2O3-NC and the x-ray tests were conducted to exam the valence band offset. The charge trapping phenomenon can be characterized by the retention tests for various temperatures. Forming gas annealing was treated on the Gd2O3-NC to passivate the deep traps. A band engineered method by CF4 plasma treatment was also conducted to improve the memory characteristics.",
author = "Lai, {Chao Sung} and Lin, {Chih Ting} and Wang, {Jer Chyi} and Chan, {Chu Fa}",
year = "2012",
doi = "10.1109/ICSICT.2012.6467581",
language = "英语",
isbn = "9781467324724",
series = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",
}