Enhanced hole mobilities in tensile-strained Si1-yCy alloy PMOSFETs

E. Quinones; S. K. Ray; K. C. Liu; S. Banerjee

Enhanced hole mobilities in tensile-strained Si_1-yC_y alloy PMOSFETs

E. Quinones^*
, S. K. Ray
, K. C. Liu
, S. Banerjee

^*此作品的通信作者

University of Texas at Austin

研究成果: 會議稿件的類型 › 論文 › 同行評審

摘要

The fabrication and transport properties of PMOSFETs utilizing a strained-engineered Si_1-yC_y channel are reported. Epitaxial layers of Si_1-yC_y were grown on low-doped, 10¹⁵ cm^-3, n-type Si substrates by ultrahigh vacuum chemical vapor deposition at 500 °C using Si₂H₆ and CH₃SiH₃. PH₃ was used as an in situ source for n-type doping. X-ray diffraction rocking curves of Si(004) plane for a tensile-strained film demonstrate the role of carbon in the strain engineering of the alloys. Atomic force microscopy shows that the addition of small amounts of carbon does not result in increased surface roughness. PMOSFETs using tensile-strained Si_1-yC_y channel layers on Si provide drive current enhancement over Si epitaxial channel layers.

原文	英語
頁面	182-183
頁數	2
出版狀態	已出版 - 1999
對外發佈	是
事件	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA 持續時間: 28 06 1999 → 30 06 1999

Conference

Conference	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
城市	Santa Barbara, CA, USA
期間	28/06/99 → 30/06/99

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引用此

@conference{0de081feef454cce8402abbf7aa7c7dc,

title = "Enhanced hole mobilities in tensile-strained Si1-yCy alloy PMOSFETs",

abstract = "The fabrication and transport properties of PMOSFETs utilizing a strained-engineered Si1-yCy channel are reported. Epitaxial layers of Si1-yCy were grown on low-doped, 1015 cm-3, n-type Si substrates by ultrahigh vacuum chemical vapor deposition at 500 °C using Si2H6 and CH3SiH3. PH3 was used as an in situ source for n-type doping. X-ray diffraction rocking curves of Si(004) plane for a tensile-strained film demonstrate the role of carbon in the strain engineering of the alloys. Atomic force microscopy shows that the addition of small amounts of carbon does not result in increased surface roughness. PMOSFETs using tensile-strained Si1-yCy channel layers on Si provide drive current enhancement over Si epitaxial channel layers.",

author = "E. Quinones and Ray, \{S. K.\} and Liu, \{K. C.\} and S. Banerjee",

year = "1999",

language = "英语",

pages = "182--183",

note = "Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) ; Conference date: 28-06-1999 Through 30-06-1999",

}

TY - CONF

T1 - Enhanced hole mobilities in tensile-strained Si1-yCy alloy PMOSFETs

AU - Quinones, E.

AU - Ray, S. K.

AU - Liu, K. C.

AU - Banerjee, S.

PY - 1999

Y1 - 1999

N2 - The fabrication and transport properties of PMOSFETs utilizing a strained-engineered Si1-yCy channel are reported. Epitaxial layers of Si1-yCy were grown on low-doped, 1015 cm-3, n-type Si substrates by ultrahigh vacuum chemical vapor deposition at 500 °C using Si2H6 and CH3SiH3. PH3 was used as an in situ source for n-type doping. X-ray diffraction rocking curves of Si(004) plane for a tensile-strained film demonstrate the role of carbon in the strain engineering of the alloys. Atomic force microscopy shows that the addition of small amounts of carbon does not result in increased surface roughness. PMOSFETs using tensile-strained Si1-yCy channel layers on Si provide drive current enhancement over Si epitaxial channel layers.

AB - The fabrication and transport properties of PMOSFETs utilizing a strained-engineered Si1-yCy channel are reported. Epitaxial layers of Si1-yCy were grown on low-doped, 1015 cm-3, n-type Si substrates by ultrahigh vacuum chemical vapor deposition at 500 °C using Si2H6 and CH3SiH3. PH3 was used as an in situ source for n-type doping. X-ray diffraction rocking curves of Si(004) plane for a tensile-strained film demonstrate the role of carbon in the strain engineering of the alloys. Atomic force microscopy shows that the addition of small amounts of carbon does not result in increased surface roughness. PMOSFETs using tensile-strained Si1-yCy channel layers on Si provide drive current enhancement over Si epitaxial channel layers.

UR - https://www.scopus.com/pages/publications/0033365693

M3 - 论文

AN - SCOPUS:0033365693

SP - 182

EP - 183

T2 - Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)

Y2 - 28 June 1999 through 30 June 1999

ER -

Enhanced hole mobilities in tensile-strained Si1-yCy alloy PMOSFETs

摘要

Conference

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Enhanced hole mobilities in tensile-strained Si_1-yC_y alloy PMOSFETs