@article{27f4cb8fb655480c98ef4b5730cf0f4b,
title = "Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces",
abstract = "The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.",
keywords = "Excimer laser, Gallium nitride (GaN), Light-emitting diode (LED)",
author = "Huang, {Hung Wen} and Chu, {Jung Tang} and Kao, {Chih Chiang} and Hsueh, {Tao Hung} and Lu, {Tien Chang} and Kuo, {Hao Chung} and Wang, {Shing Chung} and Yu, {Chang Chin} and Kuo, {Shou Yi}",
year = "2006",
month = apr,
day = "25",
doi = "10.1143/JJAP.45.3442",
language = "英语",
volume = "45",
pages = "3442--3445",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 B",
}