Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

Hung Wen Huang; Jung Tang Chu; Chih Chiang Kao; Tao Hung Hsueh; Tien Chang Lu; Hao Chung Kuo; Shing Chung Wang; Chang Chin Yu; Shou Yi Kuo

doi:10.1143/JJAP.45.3442

Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

Hung Wen Huang
, Jung Tang Chu
, Chih Chiang Kao
, Tao Hung Hsueh
, Tien Chang Lu
, Hao Chung Kuo
, Shing Chung Wang^*
, Chang Chin Yu
, Shou Yi Kuo

^*此作品的通信作者

National Yang Ming Chiao Tung University
TrueLight Corp Taiwan
Highlink Corporation
National Applied Research Laboratories Taiwan

研究成果: 期刊稿件 › 文章 › 同行評審

6 引文斯高帕斯（Scopus）

摘要

The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.

原文	英語
頁（從 - 到）	3442-3445
頁數	4
期刊	Japanese Journal of Applied Physics
卷	45
發行號	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3442
出版狀態	已出版 - 25 04 2006
對外發佈	是

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@article{27f4cb8fb655480c98ef4b5730cf0f4b,

title = "Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces",

abstract = "The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32\% due to the increase in the contact area of the nanoroughened surface.",

keywords = "Excimer laser, Gallium nitride (GaN), Light-emitting diode (LED)",

author = "Huang, \{Hung Wen\} and Chu, \{Jung Tang\} and Kao, \{Chih Chiang\} and Hsueh, \{Tao Hung\} and Lu, \{Tien Chang\} and Kuo, \{Hao Chung\} and Wang, \{Shing Chung\} and Yu, \{Chang Chin\} and Kuo, \{Shou Yi\}",

year = "2006",

month = apr,

day = "25",

doi = "10.1143/JJAP.45.3442",

language = "英语",

volume = "45",

pages = "3442--3445",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "4 B",

}

TY - JOUR

T1 - Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

AU - Huang, Hung Wen

AU - Chu, Jung Tang

AU - Kao, Chih Chiang

AU - Hsueh, Tao Hung

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

AU - Yu, Chang Chin

AU - Kuo, Shou Yi

PY - 2006/4/25

Y1 - 2006/4/25

N2 - The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.

AB - The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.

KW - Excimer laser

KW - Gallium nitride (GaN)

KW - Light-emitting diode (LED)

UR - https://www.scopus.com/pages/publications/33646934365

U2 - 10.1143/JJAP.45.3442

DO - 10.1143/JJAP.45.3442

M3 - 文章

AN - SCOPUS:33646934365

SN - 0021-4922

VL - 45

SP - 3442

EP - 3445

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 B

ER -

Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

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