摘要
Enhanced resistive switching phenomena of IrOx/GdOx/W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd2O3 films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron microscope. Via-hole memory device shows bipolar resistive switching phenomena with a large formation voltage of -6.4 V and high operation current of >1 mA, while the cross-point memory device shows also bipolar resistive switching with low-voltage format of +2 V and self-compliance operation current of <300 μA. Switching mechanism is based on the formation and rupture of conducting filament at the IrOx/GdOx interface, owing to oxygen ion migration. The oxygen-rich GdOx layer formation at the IrOx/GdOx interface will also help control the resistive switching characteristics. This cross-point memory device has also Repeatable 100 DC switching cycles, narrow distribution of LRS/HRS, excellent pulse endurance of >10,000 in every cycle, and good data retention of >104 s. This memory device has great potential for future nanoscale high-density non-volatile memory applications.
原文 | 英語 |
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文章編號 | 12 |
頁(從 - 到) | 1-8 |
頁數 | 8 |
期刊 | Nanoscale Research Letters |
卷 | 9 |
發行號 | 1 |
DOIs | |
出版狀態 | 已出版 - 2014 |