摘要
Photocurrent extraction and electron injection in CH3NH3PbBr3 (MAPbBr3) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr3 interface but also increases the crystallinity of the MAPbBr3 thin films. The optimized dual-functional PCBM-MAPbBr3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m-2. In addition, the modulation speed of the MAPbBr3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr3 thin film can be effectively reduced by using the ESA process.
| 原文 | 英語 |
|---|---|
| 文章編號 | 275704 |
| 期刊 | Nanotechnology |
| 卷 | 29 |
| 發行號 | 27 |
| DOIs | |
| 出版狀態 | 已出版 - 04 05 2018 |
文獻附註
Publisher Copyright:© 2018 IOP Publishing Ltd.
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