TY - GEN
T1 - Evaluation of silicon nitride MIM capacitors for MMIC applications
AU - Feng, Wu Shiung
AU - Chen, Yi Jung
PY - 2013
Y1 - 2013
N2 - With the rapid development and huge requirements of wireless communication systems, microwave-monolithic Integrated circuits (MMIC) with high performance and reliability have become very popular and been developed rapidly. The nitride quality and the reliability of the metal-insulator-metal (MIM) capacitor can be also researched based on time-dependent dielectric breakdown (TDDB) theory. In this paper, the various Si3N4 capacitors having different area sizes, aspect ratios and corners were designed with respect to nitride quality and lifetime evaluation.
AB - With the rapid development and huge requirements of wireless communication systems, microwave-monolithic Integrated circuits (MMIC) with high performance and reliability have become very popular and been developed rapidly. The nitride quality and the reliability of the metal-insulator-metal (MIM) capacitor can be also researched based on time-dependent dielectric breakdown (TDDB) theory. In this paper, the various Si3N4 capacitors having different area sizes, aspect ratios and corners were designed with respect to nitride quality and lifetime evaluation.
KW - Metal-insulator-metal (MIM) capacitors
KW - Ramped voltage stress
KW - Time dependent dielectric breakdown
UR - http://www.scopus.com/inward/record.url?scp=84886818621&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMM.397-400.1873
DO - 10.4028/www.scientific.net/AMM.397-400.1873
M3 - 会议稿件
AN - SCOPUS:84886818621
SN - 9783037858431
T3 - Applied Mechanics and Materials
SP - 1873
EP - 1877
BT - Advanced Design and Manufacturing Technology III
T2 - 3rd International Conference on Advanced Design and Manufacturing Engineering, ADME 2013
Y2 - 13 July 2013 through 14 July 2013
ER -