Evaluation of strength tests of Cu TSV chips using acoustic emission method

F. C. Lu; H. T. Keng; H. Y. Liu; M. Y. Tsai; P. C. Lin

doi:10.1109/ICEP.2016.7486832

Evaluation of strength tests of Cu TSV chips using acoustic emission method

F. C. Lu
, H. T. Keng
, H. Y. Liu
, M. Y. Tsai^*
, P. C. Lin

^*此作品的通信作者

機械工程學系(含學碩博士班)

Chang Gung University
Nanya Technology Corporation

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The purpose of this study is to evaluate the strength of TSV silicon chips using a point-load on elastic foundation (PoEF) test, associated with an acoustic emission (AE) method for detecting local material cracks or delamination occurring during the test before the chip breaking (or catastrophic failure). The results indicate that there are no larger-than-25 dB AE signals and no via cracks occurring before the chip breaking. However, the delamination between copper cap and silicon dioxide surface (due to poor adhesion), and bond pad crash on loading contact were found occurring with 50 dB of AE signals, respectively. It has been concluded that the strength of TSV chip is governed by the via interfacial crack failure occurring right at the maximum load.

原文	英語
主出版物標題	2016 International Conference on Electronics Packaging, ICEP 2016
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	294-297
頁數	4
ISBN（電子）	9784904090176
DOIs	https://doi.org/10.1109/ICEP.2016.7486832
出版狀態	已出版 - 07 06 2016
事件	2016 International Conference on Electronics Packaging, ICEP 2016 - Hokkaido, 日本持續時間: 20 04 2016 → 22 04 2016

出版系列

名字	2016 International Conference on Electronics Packaging, ICEP 2016

Conference

Conference	2016 International Conference on Electronics Packaging, ICEP 2016
國家/地區	日本
城市	Hokkaido
期間	20/04/16 → 22/04/16

文獻附註

Publisher Copyright:
© 2016 The Japan Institute of Electronics Packaging.

存取文件

10.1109/ICEP.2016.7486832

其它文件與鏈接

Link to publication in Scopus

引用此

Lu, F. C., Keng, H. T., Liu, H. Y., Tsai, M. Y., & Lin, P. C. (2016). Evaluation of strength tests of Cu TSV chips using acoustic emission method. 於 2016 International Conference on Electronics Packaging, ICEP 2016 (頁 294-297). 文章 7486832 (2016 International Conference on Electronics Packaging, ICEP 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP.2016.7486832

@inproceedings{de3728c612ef447d92af0c0af5b4da68,

title = "Evaluation of strength tests of Cu TSV chips using acoustic emission method",

abstract = "The purpose of this study is to evaluate the strength of TSV silicon chips using a point-load on elastic foundation (PoEF) test, associated with an acoustic emission (AE) method for detecting local material cracks or delamination occurring during the test before the chip breaking (or catastrophic failure). The results indicate that there are no larger-than-25 dB AE signals and no via cracks occurring before the chip breaking. However, the delamination between copper cap and silicon dioxide surface (due to poor adhesion), and bond pad crash on loading contact were found occurring with 50 dB of AE signals, respectively. It has been concluded that the strength of TSV chip is governed by the via interfacial crack failure occurring right at the maximum load.",

keywords = "3-D IC, Acoustic emission, Chip strength, Copper TSV, Cracks, Delamination",

author = "Lu, \{F. C.\} and Keng, \{H. T.\} and Liu, \{H. Y.\} and Tsai, \{M. Y.\} and Lin, \{P. C.\}",

note = "Publisher Copyright: {\textcopyright} 2016 The Japan Institute of Electronics Packaging.; 2016 International Conference on Electronics Packaging, ICEP 2016 ; Conference date: 20-04-2016 Through 22-04-2016",

year = "2016",

month = jun,

day = "7",

doi = "10.1109/ICEP.2016.7486832",

language = "英语",

series = "2016 International Conference on Electronics Packaging, ICEP 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "294--297",

booktitle = "2016 International Conference on Electronics Packaging, ICEP 2016",

address = "美国",

}

Lu, FC, Keng, HT, Liu, HY, Tsai, MY & Lin, PC 2016, Evaluation of strength tests of Cu TSV chips using acoustic emission method. 於 2016 International Conference on Electronics Packaging, ICEP 2016., 7486832, 2016 International Conference on Electronics Packaging, ICEP 2016, Institute of Electrical and Electronics Engineers Inc., 頁 294-297, 2016 International Conference on Electronics Packaging, ICEP 2016, Hokkaido, 日本, 20/04/16. https://doi.org/10.1109/ICEP.2016.7486832

Evaluation of strength tests of Cu TSV chips using acoustic emission method. / Lu, F. C.; Keng, H. T.; Liu, H. Y. 等.
2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 294-297 7486832 (2016 International Conference on Electronics Packaging, ICEP 2016).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Evaluation of strength tests of Cu TSV chips using acoustic emission method

AU - Lu, F. C.

AU - Keng, H. T.

AU - Liu, H. Y.

AU - Tsai, M. Y.

AU - Lin, P. C.

PY - 2016/6/7

Y1 - 2016/6/7

N2 - The purpose of this study is to evaluate the strength of TSV silicon chips using a point-load on elastic foundation (PoEF) test, associated with an acoustic emission (AE) method for detecting local material cracks or delamination occurring during the test before the chip breaking (or catastrophic failure). The results indicate that there are no larger-than-25 dB AE signals and no via cracks occurring before the chip breaking. However, the delamination between copper cap and silicon dioxide surface (due to poor adhesion), and bond pad crash on loading contact were found occurring with 50 dB of AE signals, respectively. It has been concluded that the strength of TSV chip is governed by the via interfacial crack failure occurring right at the maximum load.

AB - The purpose of this study is to evaluate the strength of TSV silicon chips using a point-load on elastic foundation (PoEF) test, associated with an acoustic emission (AE) method for detecting local material cracks or delamination occurring during the test before the chip breaking (or catastrophic failure). The results indicate that there are no larger-than-25 dB AE signals and no via cracks occurring before the chip breaking. However, the delamination between copper cap and silicon dioxide surface (due to poor adhesion), and bond pad crash on loading contact were found occurring with 50 dB of AE signals, respectively. It has been concluded that the strength of TSV chip is governed by the via interfacial crack failure occurring right at the maximum load.

KW - 3-D IC

KW - Acoustic emission

KW - Chip strength

KW - Copper TSV

KW - Cracks

KW - Delamination

UR - https://www.scopus.com/pages/publications/84978280319

U2 - 10.1109/ICEP.2016.7486832

DO - 10.1109/ICEP.2016.7486832

M3 - 会议稿件

AN - SCOPUS:84978280319

T3 - 2016 International Conference on Electronics Packaging, ICEP 2016

SP - 294

EP - 297

BT - 2016 International Conference on Electronics Packaging, ICEP 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Conference on Electronics Packaging, ICEP 2016

Y2 - 20 April 2016 through 22 April 2016

ER -

Lu FC, Keng HT, Liu HY, Tsai MY, Lin PC. Evaluation of strength tests of Cu TSV chips using acoustic emission method. 於 2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 294-297. 7486832. (2016 International Conference on Electronics Packaging, ICEP 2016). doi: 10.1109/ICEP.2016.7486832

Evaluation of strength tests of Cu TSV chips using acoustic emission method

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出版系列

Conference

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存取文件

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指紋

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