Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device

Umesh Chand; Den Berco; Ren Li; Meshal Alawein; Hossein Fariborzi

doi:10.1109/EDTM.2018.8421452

Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device

Umesh Chand
, Den Berco
, Ren Li
, Meshal Alawein
, Hossein Fariborzi

King Abdullah University of Science and Technology
Nanyang Technological University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO₂) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (10⁴ s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.

原文	英語
主出版物標題	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	217-219
頁數	3
ISBN（列印）	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421452
出版狀態	已出版 - 26 07 2018
對外發佈	是
事件	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, 日本持續時間: 13 03 2018 → 16 03 2018

出版系列

名字	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
國家/地區	日本
城市	Kobe
期間	13/03/18 → 16/03/18

文獻附註

Publisher Copyright:
© 2018 IEEE.

存取文件

10.1109/EDTM.2018.8421452

其它文件與鏈接

Link to publication in Scopus

引用此

Chand, U., Berco, D., Li, R., Alawein, M., & Fariborzi, H. (2018). Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device. 於 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (頁 217-219). 文章 8421452 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421452

Chand, Umesh ; Berco, Den ; Li, Ren 等. / Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 頁 217-219 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

@inproceedings{6aa6bf0825144db4aa5811aed668bb5c,

title = "Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device",

abstract = "In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO2) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (104 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.",

keywords = "CBRAM, Poly-Si, reliability, resistive switching",

author = "Umesh Chand and Den Berco and Ren Li and Meshal Alawein and Hossein Fariborzi",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

year = "2018",

month = jul,

day = "26",

doi = "10.1109/EDTM.2018.8421452",

language = "英语",

isbn = "9781538637111",

series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "217--219",

booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

address = "美国",

}

Chand, U, Berco, D, Li, R, Alawein, M & Fariborzi, H 2018, Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device. 於 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421452, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 217-219, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, 日本, 13/03/18. https://doi.org/10.1109/EDTM.2018.8421452

Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device. / Chand, Umesh; Berco, Den; Li, Ren 等.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 217-219 8421452 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device

AU - Chand, Umesh

AU - Berco, Den

AU - Li, Ren

AU - Alawein, Meshal

AU - Fariborzi, Hossein

PY - 2018/7/26

Y1 - 2018/7/26

N2 - In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO2) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (104 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.

AB - In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO2) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (104 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.

KW - CBRAM

KW - Poly-Si

KW - reliability

KW - resistive switching

UR - https://www.scopus.com/pages/publications/85051535340

U2 - 10.1109/EDTM.2018.8421452

DO - 10.1109/EDTM.2018.8421452

M3 - 会议稿件

AN - SCOPUS:85051535340

SN - 9781538637111

T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

SP - 217

EP - 219

BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -

Chand U, Berco D, Li R, Alawein M, Fariborzi H. Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device. 於 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 217-219. 8421452. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421452

Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device

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