Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Chuan H. Liu*, Hsiu Shan Lin, Yu Yin Lin, M. G. Chen, T. M. Pan, C. J. Kao, K. T. Huang, S. H. Lin, Y. C. Sheng, Wen Tung Chang, J. H. Lee, M. Huang, Chiung Sheng Hsiung, S. Huang-Lu, Chen Chung Hsu, Alan Y. Liang, Jenkon Chen, W. Y. Hsieh, P. W. Yen, S. C. ChienY. T. Loh, Yih J. Chang, Fu Tai Liou

*此作品的通信作者

研究成果: 期刊稿件會議文章同行評審

4 引文 斯高帕斯(Scopus)

摘要

A gate dielectric process was developed by remote plasma nitridation of N2O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.

原文英語
頁(從 - 到)268-271
頁數4
期刊Annual Proceedings - Reliability Physics (Symposium)
出版狀態已出版 - 2002
對外發佈
事件Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings - Dallas, TX, 美國
持續時間: 07 04 200211 04 2002

指紋

深入研究「Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment」主題。共同形成了獨特的指紋。

引用此