Fabrication and Characterization of Si Substrate-Free InGaN Light-Emitting Diodes and Their Application in Visible Light Communications

Chia Lung Tsai*, Ying Chang Li, Yi Chen Lu, Sheng Hsiung Chang

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

7 引文 斯高帕斯(Scopus)

摘要

Visible light communications with InGaN-based light-emitting diodes (LEDs) grown on large-diameter (6-inch) and cost-effective Si (111) substrates are investigated experimentally. During epitaxial growth, the transition layers consisted of the step-graded AlGaN buffers incorporated with three low-Temperature-grown (∼900 °C) AlN interlayers on AlN/Si substrates that are used to compensate for thermally induced tensile stress and to maintain a reasonable crystalline quality of GaN-on-Si LEDs. Strong light absorption from Si can be prevented by fabricating a Si substrate-free InGaN LED with a composite metal coating of Al/Ag/Al multilayer, providing improved adhesive strength and reflectivity comparable to the unitary Ag film. In comparison with GaN-on-Si LEDs, stripping Si substrates combined with the use of a highly reflective bottom mirror (Al/Ag/Al multilayer) reflected a more intense emission pattern corresponding to a 2.2 times (@ 190 mA) increase in light output power in thin-film LEDs. In addition, a 1.8 times (@ 160 mA) increase in optical channel bandwidth is achieved by using thin-film LEDs as optical transmitters. A direct line-of-sight optical link using the proposed thin-film LEDs achieved data transmission rates of up to 100 Mb/s over a distance of 100 cm, indicating that the proposed LEDs have potential for use as optical transmitters in indoor visible light communications.

原文英語
文章編號7879834
期刊IEEE Photonics Journal
9
發行號2
DOIs
出版狀態已出版 - 04 2017

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© 2009-2012 IEEE.

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