Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current

M. C. Wang; D. M. Hwang; P. S.D. Lin; L. Dechiaro; C. E. Zah; S. Ovadia; T. P. Lee; D. Darby

doi:10.1063/1.111346

Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current

M. C. Wang^*
, D. M. Hwang
, P. S.D. Lin
, L. Dechiaro
, C. E. Zah
, S. Ovadia
, T. P. Lee
, D. Darby

^*此作品的通信作者

Telcordia Technologies
Lasertron

研究成果: 期刊稿件 › 文章 › 同行評審

11 引文斯高帕斯（Scopus）

摘要

High-voltage electron-beam-induced-current imaging is used to study the aging of two sets of commercial 0.98 μm lasers with identical strained quantum wells (In_0.2Ga_0.8As) but different cladding layers (Al_0.55Ga_0.45As versus In_0.49Ga _0.51P) on GaAs substrates. We observed the development of facet defects only in the InGaAs/AlGaAs lasers which also exhibited larger threshold-current increases. It therefore suggests that this facet degradation mode is related to the cladding layer composition, not to the strains in the active layer.

原文	英語
頁（從 - 到）	3145-3147
頁數	3
期刊	Applied Physics Letters
卷	64
發行號	23
DOIs	https://doi.org/10.1063/1.111346
出版狀態	已出版 - 1994
對外發佈	是

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title = "Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current",

abstract = "High-voltage electron-beam-induced-current imaging is used to study the aging of two sets of commercial 0.98 μm lasers with identical strained quantum wells (In0.2Ga0.8As) but different cladding layers (Al0.55Ga0.45As versus In0.49Ga 0.51P) on GaAs substrates. We observed the development of facet defects only in the InGaAs/AlGaAs lasers which also exhibited larger threshold-current increases. It therefore suggests that this facet degradation mode is related to the cladding layer composition, not to the strains in the active layer.",

author = "Wang, \{M. C.\} and Hwang, \{D. M.\} and Lin, \{P. S.D.\} and L. Dechiaro and Zah, \{C. E.\} and S. Ovadia and Lee, \{T. P.\} and D. Darby",

year = "1994",

doi = "10.1063/1.111346",

language = "英语",

volume = "64",

pages = "3145--3147",

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TY - JOUR

T1 - Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current

AU - Wang, M. C.

AU - Hwang, D. M.

AU - Lin, P. S.D.

AU - Dechiaro, L.

AU - Zah, C. E.

AU - Ovadia, S.

AU - Lee, T. P.

AU - Darby, D.

PY - 1994

Y1 - 1994

N2 - High-voltage electron-beam-induced-current imaging is used to study the aging of two sets of commercial 0.98 μm lasers with identical strained quantum wells (In0.2Ga0.8As) but different cladding layers (Al0.55Ga0.45As versus In0.49Ga 0.51P) on GaAs substrates. We observed the development of facet defects only in the InGaAs/AlGaAs lasers which also exhibited larger threshold-current increases. It therefore suggests that this facet degradation mode is related to the cladding layer composition, not to the strains in the active layer.

AB - High-voltage electron-beam-induced-current imaging is used to study the aging of two sets of commercial 0.98 μm lasers with identical strained quantum wells (In0.2Ga0.8As) but different cladding layers (Al0.55Ga0.45As versus In0.49Ga 0.51P) on GaAs substrates. We observed the development of facet defects only in the InGaAs/AlGaAs lasers which also exhibited larger threshold-current increases. It therefore suggests that this facet degradation mode is related to the cladding layer composition, not to the strains in the active layer.

UR - https://www.scopus.com/pages/publications/0028766445

U2 - 10.1063/1.111346

DO - 10.1063/1.111346

M3 - 文章

AN - SCOPUS:0028766445

SN - 0003-6951

VL - 64

SP - 3145

EP - 3147

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current

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