Failure analysis of bond pad metal peeling using FIB and AFM

Cher Ming Tan; Eddie Er; Younan Hua; Vincent Chai

doi:10.1109/95.740051

Failure analysis of bond pad metal peeling using FIB and AFM

Cher Ming Tan^*
, Eddie Er
, Younan Hua
, Vincent Chai

^*此作品的通信作者

Nanyang Technological University

研究成果: 期刊稿件 › 文章 › 同行評審

17 引文斯高帕斯（Scopus）

摘要

Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion can be avoided. In this work, FIB, SEM, EDX, and AFM are used to identify the root causes of the peeling. The possible root causes are found to be the presence of an extra layer of thickness of 0.14 μm and the poly-silicon surface roughness asperity due to prolonged BOE etching time.

原文	英語
頁（從 - 到）	585-591
頁數	7
期刊	IEEE transactions on components, packaging, and manufacturing technology. Part A
卷	21
發行號	4
DOIs	https://doi.org/10.1109/95.740051 https://doi.org/10.1109/95.740049
出版狀態	已出版 - 1998
對外發佈	是

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abstract = "Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion can be avoided. In this work, FIB, SEM, EDX, and AFM are used to identify the root causes of the peeling. The possible root causes are found to be the presence of an extra layer of thickness of 0.14 μm and the poly-silicon surface roughness asperity due to prolonged BOE etching time.",

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AU - Hua, Younan

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AB - Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion can be avoided. In this work, FIB, SEM, EDX, and AFM are used to identify the root causes of the peeling. The possible root causes are found to be the presence of an extra layer of thickness of 0.14 μm and the poly-silicon surface roughness asperity due to prolonged BOE etching time.

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Failure analysis of bond pad metal peeling using FIB and AFM

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