摘要
It is desirable to achieve both fast data access time and long data retention time simultaneously. We have developed IT PZT/40Å-Al2O3 memory to achieve very fast write (program/erase) rime <100ns, years long data retention, and good endurance > 1010 P/E cycles. The small 1T size is highly competitive with other memory technologies.
原文 | 英語 |
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頁面 | 18-19 |
頁數 | 2 |
出版狀態 | 已出版 - 2001 |
對外發佈 | 是 |
事件 | Device Research Conference (DRC) - Notre Dame, IN, 美國 持續時間: 25 06 2001 → 27 06 2001 |
Conference
Conference | Device Research Conference (DRC) |
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國家/地區 | 美國 |
城市 | Notre Dame, IN |
期間 | 25/06/01 → 27/06/01 |