Fast write time and long retention 1T memory

A. Chin*, M. Y. Yang, S. B. Chen, C. L. Sun, S. Y. Chen

*此作品的通信作者

研究成果: 會議稿件的類型論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

It is desirable to achieve both fast data access time and long data retention time simultaneously. We have developed IT PZT/40Å-Al2O3 memory to achieve very fast write (program/erase) rime <100ns, years long data retention, and good endurance > 1010 P/E cycles. The small 1T size is highly competitive with other memory technologies.

原文英語
頁面18-19
頁數2
出版狀態已出版 - 2001
對外發佈
事件Device Research Conference (DRC) - Notre Dame, IN, 美國
持續時間: 25 06 200127 06 2001

Conference

ConferenceDevice Research Conference (DRC)
國家/地區美國
城市Notre Dame, IN
期間25/06/0127/06/01

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