Field modulation of the electronic structure of trilayer graphene

Bandgaps play a central role in modern device physics, and a tunable bandgap can provide great flexibility in device design. Herein, an investigation of trilayer graphene modulated using an external electric field is presented. The calculations for trilayer graphene with hexagonal, Bernal, and rhombohedral stacking have been carried out. It was found that the bandgap of rhombohedral trilayer graphene can be tuned using an electric field. Symmetry plays a crucial role in the modulation the bandgap of trilayer graphene through an electric field.