Flash memory device characteristics of atomic layer deposited crystallite Al2O3 films with large memory window and long retention

Siddheswar Maikap, W. Banerjee, S. Z. Rahaman, Atanu Das

研究成果: 會議稿件的類型 › 會議論文

原文	美式英語
出版狀態	已出版 - 2008
事件	IEEE Silicon Nanoelectronics Workshop - Honolulu, Hawaii, USA 持續時間: 15 06 2008 → 16 06 2008

Conference	IEEE Silicon Nanoelectronics Workshop
期間	15/06/08 → 16/06/08

引用此

@conference{069d0b112137428491ae1ebbe1800344,

title = "Flash memory device characteristics of atomic layer deposited crystallite Al2O3 films with large memory window and long retention",

author = "Siddheswar Maikap and W. Banerjee and Rahaman, {S. Z.} and Atanu Das",

year = "2008",

language = "American English",

note = "IEEE Silicon Nanoelectronics Workshop ; Conference date: 15-06-2008 Through 16-06-2008",

}