Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng; Shu Hung Yu; Ching Yuan Su

doi:10.1109/EDSSC.2013.6628218

Flexible InGaZnO TFTs with stacked GeO₂/TiO₂ gate dielectrics

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shu Hung Yu, Ching Yuan Su

電子工程學系(含學碩博士班)

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO₂/TiO₂ on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm ²/Vs, and a good I_on/I_off ratio of 3.7×10⁵. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO₂ and higher-K TiO₂.

原文	英語
主出版物標題	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628218
出版狀態	已出版 - 2013
事件	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, 香港持續時間: 03 06 2013 → 05 06 2013

出版系列

名字	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Conference

Conference	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
國家/地區	香港
城市	Hong Kong
期間	03/06/13 → 05/06/13

存取文件

10.1109/EDSSC.2013.6628218

其它文件與鏈接

Link to publication in Scopus

引用此

Hsu, H. H., Chang, C. Y., Cheng, C. H., Yu, S. H., & Su, C. Y. (2013). Flexible InGaZnO TFTs with stacked GeO₂/TiO₂ gate dielectrics. 於 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 文章 6628218 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628218

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title = "Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics",

abstract = "We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm 2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-K TiO2.",

keywords = "GeO, TiO, flexible, thin film transistor (TFT)",

author = "Hsu, {Hsiao Hsuan} and Chang, {Chun Yen} and Cheng, {Chun Hu} and Yu, {Shu Hung} and Su, {Ching Yuan}",

year = "2013",

doi = "10.1109/EDSSC.2013.6628218",

language = "英语",

isbn = "9781467325233",

series = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

booktitle = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

note = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 ; Conference date: 03-06-2013 Through 05-06-2013",

}

Hsu, HH, Chang, CY, Cheng, CH, Yu, SH & Su, CY 2013, Flexible InGaZnO TFTs with stacked GeO₂/TiO₂ gate dielectrics. 於 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628218, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, 香港, 03/06/13. https://doi.org/10.1109/EDSSC.2013.6628218

Flexible InGaZnO TFTs with stacked GeO₂/TiO₂ gate dielectrics. / Hsu, Hsiao Hsuan; Chang, Chun Yen; Cheng, Chun Hu 等.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628218 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

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AU - Cheng, Chun Hu

AU - Yu, Shu Hung

AU - Su, Ching Yuan

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N2 - We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm 2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-K TiO2.

AB - We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm 2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-K TiO2.

KW - GeO

KW - TiO

KW - flexible

KW - thin film transistor (TFT)

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